| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
USBBusInterfaceChIp | WCHJiangsu Qinheng Co. , Ltd. 南京沁恒江苏沁恒股份有限公司 | WCH | ||
USBBusInterfaceChIp | WCHJiangsu Qinheng Co. , Ltd. 南京沁恒江苏沁恒股份有限公司 | WCH | ||
D374-TypeDigitalUncooled2.5Gbits/sLaserModule | agere 杰尔 | agere | ||
POWERTRANSFORMERPCMountDualPrimary | TRIAD TRIAD MAGNETICS | TRIAD | ||
8-BITREGISTERSWITH3-STATEOUTPUTS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
8-BITREGISTERSWITH3-STATEOUTPUTS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPSWITH3-STATEOUTPUTS | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPSWITH3-STATEOUTPUTS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
Octal3-StateNon-InvertingDFlip-Flop Octal3-StateNon-InvertingDFlip-Flop High−PerformanceSilicon−GateCMOS TheMC74HC374AisidenticalinpinouttotheLS374.ThedeviceinputsarecompatiblewithstandardCMOSoutputs;withpullupresistors,theyarecompatiblewithLSTTLoutputs. Datameetingthesetuptimeisclock | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
22+ |
SBGA |
2243 |
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙ |
询价 | ||
TI |
22+ |
SO-8 |
2250 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | ||
TI |
23+ |
SBGA |
5000 |
原装现货,优势热卖 |
询价 | ||
TI |
00/01+ |
SBGA |
174 |
全新原装100真实现货供应 |
询价 | ||
TI |
2017+ |
TSSOP |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
TI |
1604+ |
TVSOP-48 |
2158 |
低价支持实单,可送样品! |
询价 | ||
TI |
24+ |
TSSOP |
5000 |
只做原装公司现货 |
询价 | ||
主营TI |
2020+ |
原厂封装 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
TI/德州仪器 |
TSSOP48 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
TI/德州仪器 |
22+ |
TSSOP48 |
25000 |
只做原装,原装,假一罚十 |
询价 |
相关规格书
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