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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRFR9220TRPBFA	文件：785.7 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9220TRR	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9220TRR	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRRA	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRRPBF	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9220TRRPBF	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRRPBFA	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRRPBFA	文件：785.7 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFU9220	文件：785.7 Kbytes Page：13 Pages	PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9220,SiHFR9220) •Straightlead(IRFUFU9220,SiHFU9220) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFU9220	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9220	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9220	文件：4.5583 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9220	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFU9220	文件：169 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.6A) DESCRIPTION TheHEXFEtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES •	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFU9220	文件：99.42 Kbytes Page：8 Pages	3.6A,200V,1.500Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancement-modesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
IRFU9220PBF	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFU9220PBF	文件：1.08269 Mbytes Page：10 Pages	HEXFET짰PowerMOSFET	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFU9220PBF	文件：4.5583 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9220PBF	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9220PBF	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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产品属性

产品编号：
LAN9220-ABZJ
制造商：
Microchip Technology
类别：
集成电路（IC） > 控制器
包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
协议：
以太网
功能：
控制器
接口：
并联
标准：
10/100 Base-T/TX PHY
电压 - 供电：
1.8V，2.5V，3.3V
工作温度：
0°C ~ 70°C
封装/外壳：
56-VFQFN 裸露焊盘
供应商器件封装：
56-QFN
描述：
IC ETHERNET CTRLR 56QFN

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市仟禧电子有限公司	LAN9220-ABZJ	MICROCHIP/微芯	22+	QFN56	10000	原厂直供只做原装	询价
深圳市勤尚伟业电子有限公司	LAN9220-ABZJ	MICROCHIP	22+		2600	原装正品	询价
深圳市纳艾斯科技有限公司	LAN9220-ABZJ	SMSC	2019+	QFN56	8000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市赛恒电子科技有限公司	LAN9220-ABZJ	Microchip	21+	QFN-56	3000	原装正品公司现货价格优惠	询价
深圳市昌和盛利电子有限公司	LAN9220-ABZJ	SMSCE	23+	QFN-56	30000	原装正品价格优惠,长期优势供应	询价
上海鑫科润电子科技有限公司	LAN9220-ABZJ	SMSC	14+	QFN56	9860	大量原装进口现货,一手货源,一站式服务,可开17%增	询价
深圳市正纳电子有限公司	LAN9220-ABZJ	SMSC	1410+ROHS全新原装	QFN56	12890	原装现货在线咨询样品※技术支持专业电子元器件授权	询价
深圳市赛尔通科技有限公司	LAN9220-ABZJ	SMSC	23+	QFN-56	65400		询价
深圳市凯盛恒创科技有限公司	LAN9220-ABZJ	SMSC	19+	QFN	50000	全新原装	询价
深圳市恒意法电子有限公司	LAN9220-ABZJ	SMSC	21+	QFN56	21000	专营原装正品现货,当天发货,可开发票!	询价

更多LAN9220-ABZJ供应商更新时间2024-4-21 14:11:00

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