首页 >LA6508H-MPB-E>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IsolatedDiodeArraywithHiRelMQ,MX,MV,andSPScreeningOptions | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
30VN-ChannelAlphaMOS GeneralDescription •LatestTrenchPowerAlphaMOS(αMOSLV)technology •VeryLowRDS(on)at4.5VGS •LowGateCharge •HighCurrentCapability •RoHSandHalogen-FreeCompliant ProductSummary VDS30V ID(atVGS=10V) | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
500kHz21V3ASYNCHRONOUSDC/DCBUCKCONVERTER | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
500kHz21V3ASYNCHRONOUSDC/DCBUCKCONVERTER | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
20C287/36TCPVCOASPVCCOMMUNICATIONCABLE | GENERALGeneral Electric 通用电气公司美国通用电气公司 | GENERAL | ||
1024x1CMOSRAM Description TheHM-6508isa1024x1staticCMOSRAMfabricatedusingself-alignedsilicongatetechnology.Synchronouscircuitdesigntechniquesareemployedtoachievehighperformanceandlowpoweroperation. Features •LowPowerStandby....................50µWMax •L | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
DualTripSOTTemperatureSwitches | MaximMaximIntegrated 美信半导体 | Maxim | ||
DualTripSOTTemperatureSwitchesNoExternalComponentsRequired | MaximMaximIntegrated 美信半导体 | Maxim | ||
2.7V-to-18V,1.2A,BipolarStepperMotorDriverwithIntegratedMOSFETs | MPSMonolithic Power Systems Inc. 美国芯源美国芯源系统有限公司 | MPS | ||
2.7V-to-18V,1.2A,BipolarStepperMotorDriverwithIntegratedMOSFETs | MPSMonolithic Power Systems Inc. 美国芯源美国芯源系统有限公司 | MPS | ||
2.7V-to-18V,1.2A,BipolarStepperMotorDriverwithIntegratedMOSFETs | MPSMonolithic Power Systems Inc. 美国芯源美国芯源系统有限公司 | MPS | ||
3-PhaseSinusoidalSensorlessBrushlessDCFanMotorDriver | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | ||
3-PhaseSinusoidalSensorlessBrushlessDCFanMotorDriver | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | ||
3-PhaseSinusoidalSensorlessBrushlessDCFanMotorDriver | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | ||
N-channelMOSFET650V,9.5A,0.85 Description TheN6508NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Lowon-stateresistance RDS(on)=0.85MAX.(VGS=10V,ID=4.75A) Lowinputcapacitance Ciss=2160pFTYP.(VDS=10V,VGS=0V) Highcurrent ID(DC)=±9 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
IntegratedCircuitCMOS,1KStaticRAM(SRAM) Description: TheNTE6508isa1024x1fullystaticCMOSRAMina16–LeadDIPtypepackagefabricatedusingself–alignedsilicongatetechnology.Synchronouscircuitdesigntechniquesareemployedtoacheivehighperformanceandlowpoweroperation.Onchiplatchesareprovidedforaddressallowi | NTE NTE Electronics, Inc | NTE | ||
NECsInGaAsPMQW-DFBLASERDIODEINCANPACKAGEFOR2.5Gb/s,CWDMAPPLICATIONS | CEL California Eastern Laboratories | CEL | ||
LASERDIODE 1470TO1610nmFOR2.5Gb/s,CWDM InGaAsPMQW-DFBLASERDIODE DESCRIPTION TheNX6508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPINPD. Thesedevicesareidealfor2.5Gb/sCWDMapplication. FEATURES • | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NECsInGaAsPMQW-DFBLASERDIODEINCANPACKAGEFOR2.5Gb/s,CWDMAPPLICATIONS | CEL California Eastern Laboratories | CEL | ||
ThreePhaseACControllerModules | POWERSEM Powersem GmbH, | POWERSEM |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
85300 |
正品授权货源可靠 |
询价 | |||
SANYO |
2017+ |
SOP |
25689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
SANYO |
1741+ |
SOP |
6528 |
只做进口原装正品假一赔十! |
询价 | ||
SANYO |
22+ |
HSOP |
5000 |
原装现货库存.价格优势!! |
询价 | ||
SANYO |
21+ |
SOP |
65200 |
一级代理/放心采购 |
询价 | ||
SANYO |
SOP-28 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
SANYO/三洋 |
SMD |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
SANTO |
1635+ |
6000 |
好渠道!好价格!一片起卖! |
询价 | |||
SANYO |
23+ |
标准封装 |
18000 |
询价 | |||
SANYO |
23+ |
SIP |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
询价 |
