Description

The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.

Features

■ High voltage rail up to 600V

■ dV/dt immunity ±50V/nsec in full temperature range

■ Driver current capability:

– 400mA source,

– 650mA sink

■ Switching times 50/30 nsec rise/fall with 1nF load

■ CMOS/TTL Schmitt trigger inputs with hysteresis and pull down

■ Under voltage lock out on lower and upper driving section

■ Internal bootstrap diode

■ Outputs in phase with inputs

L6385ED013TR属于集成电路（IC） > 栅极驱动器。意法半导体（ST）集团制造生产的L6385ED013TR栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。