| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
L2N60P | 600V N-Channel MOSFET Low gane charge | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 |  | |
2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | ||
N2Amps竊?00VoltsN-ChannelMOSFET Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd |  | ||
2Amps,600/650VoltsN-CHANNELPOWERMOSFET TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | ||
600VN-ChannelPowerMOSFET Features ●RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 |  | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 |  | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | ||
2A,600VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | ||
2Amps,600VoltsN-CHANNELMOSFET FEATURE ●2A,600V,RDS(ON)=4Ω@VGS=10V/1A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 |  | ||
TO-251Plastic-EncapsulateMOSFET N-ChannelMOSFET Features ●RobustHighVoltageTermination ●AvalancheEnergySpecified ●DiodeisCharacterizedforUseinBridgeCircuits ●IDSSandVDS(on)SpecifiedatElevatedTemperature | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 |  | ||
N-CHANNELMOSFET DESCRIPTION 2N602N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 |  | ||
N-ChannelPowerMOSFET DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications. TheNell2N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof2A,fastswitchi | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 |  | ||
FastSwitching •FEATURES •Draincurrent:ID=2A@TC=25℃ •Drainsourcevoltage:VDSS=600V(Min) •Staticdrain-sourceon-resistance:RDS(on)=5.0Ω(Max) •Fastswitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz •APPLICATIONS •Switch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-CHANNELMOSFET | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  |
详细参数
- 型号：
L2N60P
- 制造商：
LRC
- 制造商全称：
Leshan Radio Company
- 功能描述：
600V N-Channel MOSFET Low gane charge
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LRC/乐山 |
23+ |
TO-220 |
18000 |
原装正品假一罚百!可开增票! |
询价 | ||
LRC/乐山 |
22+ |
TO-220 |
50000 |
原装正品.假一罚十 |
询价 | ||
LRC/乐山 |
23+ |
TO-220 |
98000 |
询价 | |||
LRC |
23+ |
SC89 |
45000 |
原装正品现货 |
询价 | ||
LRC/乐山 |
22+ |
SC89 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
LRC/乐山 |
SC89 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
LRC |
22+ |
SC89 |
4546 |
原装现货 |
询价 | ||
LRC-乐山无线电 |
24+25+/26+27+ |
SC-89 |
57500 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
LRC/乐山 |
23+ |
SC89 |
50000 |
原装正品 支持实单 |
询价 | ||
LRC |
21+ |
SOT23 |
50000 |
全新原装正品现货,支持订货 |
询价 |
相关规格书
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- L2N7002DW1T1G
- L2N7002KLT1G
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相关库存
更多- L2N7002DMT3G
- L2N7002DW1T3G
- L2N7002LT1
- L2N7002LT1G_11
- L2N7002WT1G
- L2N7003LT1
- L2-OPC1-1-MED
- L2-OPC1-1-SDIF
- L2-OPC1-1-WIDE
- L2-OPXP-1-OVAL
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- L2-R12
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- L2-R56
- L2-R82
- L-2-S
- L2SA1036KLT1G
- L2SA1036KQLT1
- L2SA1036KRLT1
- L2SA1037AKLT1
- L2SA1037AKQLT1G
- L2SA1037AKSLT1
- L2SA1235FLT1G
- L2SA1576AQLT1G
- L2SA1576AQT1
- L2SA1576AST1
- L2SA1576AXT1G
- L2SA1774QT1
- L2SA1774QT1G_11
- L2SA1774RT1
- L2SA1774RT3G
- L2SA1774ST1G
- L2SA1774T1
- L2SA2030M3T5G
- L2SA812LT1
- L2SA812QLT1G
- L2SA812RLT1
- L2SA812SLT1
- L2SB1197KQLT1
- L2SB1197KQLT1G_11
- L2SB1197KRLT1G
- L2SC1623LT1
- L2SC1623QLT1G
