首页 >KTC3205Y/P>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
100A,55V,0.008Ohm,N-Channel,PowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFET | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedProcessTechnologyUltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelTrenchProcessPowerMOSFETTransistor | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | ||
HEXFETPowerMOSFET | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
N-ChannelPowerMOSFET(55V/110A) | FS First Silicon Co., Ltd | FS | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KEC |
TO-92L |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
KEC |
23+ |
ROHSTO-92L |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
KEC |
05+ |
原厂原装 |
3051 |
只做全新原装真实现货供应 |
询价 | ||
KEC |
2022+ |
200 |
全新原装 货期两周 |
询价 | |||
KEC |
2017+ |
TO-92 |
35685 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
KEC |
2016+ |
TO-92 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
KEC |
60000 |
询价 | |||||
KEC |
18+ |
TO-92 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
23+ |
N/A |
35900 |
正品授权货源可靠 |
询价 | |||
KEC |
2020+ |
TO-92L |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
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