首页 >KSC-WA1001>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
AirPurificationComboONE KeyFeatures&Benefits Calibratedsignaloutputsincompliance withinternationalstandards(PM1.0, PM2.5,PM10,TVOC,eCO2 1,AQI2, temperatureandrelativehumidity). Matchbox-size,fullyorchestrated designforspace-constrainedapplications andlowestoverallBOMcosts. Systemlevel | SCIOSENSESciosense B.V. 感奥艾半导体 | SCIOSENSE | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV®SINGLEDIEISOTOP®PACKAGE | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV®SINGLEDIEISOTOP®PACKAGE | ADPOW Advanced Power Technology | ADPOW | ||
CircuitModelsforPlasticPackagedMicrowaveDiodes Introduction Discrete,low-cost,surfacemountsemiconductordiodesareattractivechoicesforUHFandmicrowaveapplicationswherepackageparasiticmayhaveasignificantimpactonperformance.ThemostcommonpackagestylesaretheSOT-23andtheSOD-323(Figure1)whichwereneitherdesigne | SKYWORKSSkyworks Solutions Inc. 思佳讯美国思佳讯公司 | SKYWORKS | ||
PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERMOSVFREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •AvalancheEner | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
POWERMOSVFREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •AvalancheEner | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
100AvalancheTested PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
100AvalancheTested PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
GIGABITRJ45LANMAGNETIC | ABRACONAbracon Corporation 阿布雷肯 | ABRACON |
详细参数
- 型号：
KSC-WA1001
- 功能描述：
AKTIVE SUB-TUBE
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
C&a;K |
2308+ |
126864 |
一级代理,原装正品,公司现货! |
询价 | |||
C&K |
21+ |
- |
35000 |
航宇科工半导体-央企合格优秀供方 |
询价 | ||
C&KCOMPONENTSSAS |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
xcfuse(旭程) |
2021+ |
Through Hole |
1370 |
询价 | |||
xcfuse(旭程) |
23+ |
6000 |
诚信服务，绝对原装原盘 |
询价 |
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