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AOU414L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOU414usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion.StandardProductAOU414isPb-free(meetsROHS&Sony25

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AQV414

HIGHVOLTAGE,PHOTOMOSRELAY

ETCList of Unclassifed Manufacturers

未分类制造商

AQV414

HIGHVOLTAGE,PHOTOMOSRELAY

ETCList of Unclassifed Manufacturers

未分类制造商

AQV414

Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414A

Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414A

HIGHVOLTAGE,PHOTOMOSRELAY

ETCList of Unclassifed Manufacturers

未分类制造商

AQV414AX

Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414AZ

Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments

FEATURES 1.Lowon-resistance(typ.26Ω)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit

PanasonicPanasonic Corporation

松下松下电器

AQV414E

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414EA

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414EAX

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414EAZ

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414EH

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414EHA

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414EHAX

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414EHAZ

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISPanasonic electrical machinery (China) Co. , Ltd.

松下电器松下电器机电(中国)有限公司

AQV414S

HIGHVOLTAGE,PHOTOMOSRELAY

ETCList of Unclassifed Manufacturers

未分类制造商

AQW414

HIGHVOLTAGE,PHOTOMOSRELAY

etc2List of Unclassifed Manufacturers

etc2未分类制造商

AQW414

GU(GeneralUse)Type[2-Channel(FormB)Type]

ETCList of Unclassifed Manufacturers

未分类制造商

AQW414A

HIGHVOLTAGE,PHOTOMOSRELAY

etc2List of Unclassifed Manufacturers

etc2未分类制造商

详细参数

  • 型号:

    KP414

  • 制造商:

    GARVIN

  • 功能描述:

    Kick Plate for 4 Square, 14

供应商型号品牌批号封装库存备注价格
CRRC中车
23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
询价
23+
SOT23-6L
12000
原装正品假一罚百!可开增票!
询价
22+
SOT23-6L
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
KIWI(必易微)
2021+
ESOP-8
499
询价
KIWI
22+
SOP-8
50000
电源芯片MOS驱动IC
询价
必易
ROHS+Original
原厂原封元件
25890
原装现货 库存特价/长期供应元器件代理经销
询价
Kiwi Instruments(必易微)
23+
SOT236
6000
诚信服务,绝对原装原盘
询价
可控硅
1950+
980
只做原装正品现货!或订货假一赔十!
询价
TECHSEM
MODULE
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
PHILIPS
250
全新原装 货期两周
询价
更多KP414供应商 更新时间2024-6-4 9:02:00