KP-505资料datasheet下载批发采购第4页-114ic电子网

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BF505	文件：36.66 Kbytes Page：2 Pages	NPNSILICONRFTRANSISTOR NPNSiliconRFTransistor BF505isanNPNsiliconplanarRFtransistorinTO92plasticpackage(10A3DIN41868). ThetransistorisparticularlyintendedforuseinVHFamplifiersincommonemitterconfiguration,VHFmixersandVHF/UHFoscillators.	SIEMENS Siemens Ltd	SIEMENS
BFC505	文件：82.39 Kbytes Page：11 Pages	NPNwidebandcascodetransistor DESCRIPTION Cascodeamplifierwithtwodiscretediesinasurfacemount,5-pinSOT353(S-mini)package.TheamplifierisprimarilyintendedforlowpowerRFcommunicationsequipment,suchaspagersandhasaverylowfeedbackcapacitanceresultinginhighisolation. FEATURES •Smallsize •Hig	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFE505	文件：59.19 Kbytes Page：8 Pages	NPNwidebanddifferentialtransistor DESCRIPTION EmittercoupleddualNPNsiliconRFtransistorinasurfacemount,5-pinSOT353(S-mini)package.ThetransistorisprimarilyintendedforapplicationsintheRFfrontendasabalancedmixer,adifferentialamplifierinanaloganddigitalcellularphones,andincordlessphones,page	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505	文件：159.22 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505	文件：306.4 Kbytes Page：13 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505	文件：136.27 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors	JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司	JMNIC
BFG505/X	文件：148.94 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505/X	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505/X	文件：306.4 Kbytes Page：13 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505/X	文件：159.22 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505W	文件：148.94 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505W	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505W/X	文件：148.94 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505W-X	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505W-XR	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505-X	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFM505	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFM505	文件：92.89 Kbytes Page：10 Pages	DualNPNwidebandtransistor DESCRIPTION DualtransistorwithtwosiliconNPNRFdiesinasurfacemount,6-pinSOT363(S-mini)package.ThetransistorsareprimarilyintendedforwidebandapplicationsintheGHz-rangeintheRFfrontendofanaloganddigitalcellularphones,cordlessphones,radardetectors,pagersandsat	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFR505	文件：120.89 Kbytes Page：12 Pages	NPN9GHzwidebandtransistor DESCRIPTION TheBFR505isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips

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详细参数

型号：
KP-505
制造商：
Panduit Corp

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市亿联芯电子科技有限公司	KP506	NICERA	2023+	TO-5	60000	一级代理优势现货,全新正品直营店	询价
上海市鑫鸿达电子	KP-506A	Panduit	2022+		2	全新原装货期两周	询价
深圳市艾宇欣科技有限公司	KP-506A	Panduit Corp	2010+	N/A	66	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市德力诚信科技有限公司	KP-506A	PANDUIT	23+	NA	100	现货!就到京北通宇商城	询价
千层芯半导体(深圳)有限公司	KP506B	NICERA	2018+	TO-5	60000	热释电红外传感器	询价
深圳市科恒伟业电子有限公司	KP506B	NICERA	1822+	TO-3	6852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市艾宇特电子科技有限公司	KP506B	NICERA	2048+	TO-3	9852	只做原装正品现货!或订货假一赔十!	询价
深圳市振芯物联科技有限公司	KP506B	NICERA	22+	TO-3	32350	原装正品假一罚十公司现货	询价
深圳市威尔健半导体有限公司	KP506B	NICERA	23+	TO-3	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	KP506B	NICERA	21+	TO-3	10000	原装现货假一罚十	询价

更多KP-505供应商更新时间2024-5-31 9:00:00

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