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K9F5616U0C-HIB0中文资料PDF规格书
K9F5616U0C-HIB0规格书详情
GENERAL DESCRIPTION
Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on a 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even thewrite intensive systems can take advantage of the K9F56XXX0C¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
产品属性
- 型号:
K9F5616U0C-HIB0
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
512Mb/256Mb 1.8V NAND Flash Errata
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
23+ |
NA/ |
3310 |
原装现货,当天可交货,原型号开票 |
询价 | ||
SAMSUNG/三星 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
SAMSUNG |
23+ |
TSOP |
20000 |
原厂原装正品现货 |
询价 | ||
SAMSUNG |
23+ |
11228 |
1008 |
全新原装现货 |
询价 | ||
Samsung/Samsung Group/三星/三 |
21+ |
TSOP |
1176 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SAMSUNG |
2023+ |
FBGA63 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
SAMSUNG |
23+ |
TSOP |
3040 |
原厂原装正品 |
询价 | ||
SAMSUNG/三星 |
19+ |
BGA |
13540 |
进口原装现货 |
询价 | ||
SAMSUNG/三星 |
2022 |
TSOP48 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
SAMSUANG |
22+ |
TSOP48 |
8000 |
原装正品支持实单 |
询价 |