首页 >K6R1008C1D>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
K6R1008C1D | 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERALDESCRIPTION TheK6R1016V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas65,536wordsby16bits.TheK6R1016V1Duses16commoninputandoutputlinesandhasatoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatlo | SamsungSamsung Group 三星三星半导体 | Samsung | |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate | SamsungSamsung Group 三星三星半导体 | Samsung | ||
128Kx8HighSpeedStaticRAM5VOperating,RevolutionaryPinout.OperatedatCommercialandIndustrialTemperatureRanges. | SamsungSamsung Group 三星三星半导体 | Samsung | ||
128Kx8BitHighSpeedStaticRAM5VOperating,RevolutionaryPinout.OperatedatCommercialandIndustrialTemperatureRanges. | SamsungSamsung Group 三星三星半导体 | Samsung | ||
128Kx8BitHigh-SpeedCMOSStaticRAM(5VOperating).OperatedatCommercialandIndustrialTemperatureRanges. | SamsungSamsung Group 三星三星半导体 | Samsung |
详细参数
- 型号：
K6R1008C1D
- 制造商：
SAMSUNG
- 制造商全称：
Samsung semiconductor
- 功能描述：
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUNSANG |
2017+ |
SOJ |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
SEC |
SOJ32 |
0634+ |
1000 |
全新原装进口自己库存优势 |
询价 | ||
SAMSUNG |
2022 |
SOP32 |
5280 |
原厂原装正品,价格超越代理 |
询价 | ||
SAMSUNG |
1305+ |
原装假一赔十 |
12000 |
公司特价原装现货 |
询价 | ||
SAMSUNG |
23+ |
SOJ |
35890 |
询价 | |||
SAMSUNG |
04+ |
SOJ |
2 |
特价热销现货库存100%原装正品欢迎来电订购! |
询价 | ||
SAMSUNG |
12+ |
SOP32 |
100000 |
全新原装,公司大量现货,绝对正品供应 |
询价 | ||
SAMSUNG |
2020+ |
SOJ |
992 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
SAMSUNG |
22+ |
TSOP-32 |
4650 |
询价 | |||
SAMSUNG |
23+ |
标准封装 |
18000 |
询价 |
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