K6R1004V1D-TC说明书PDF资料批发采购三星-114ic电子网

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K6R1004V1C-C	文件：137.32 Kbytes Page：9 Pages	256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(3.3VOperating).	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004V1C-I	文件：137.32 Kbytes Page：9 Pages	256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(3.3VOperating).	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004V1C-L	文件：137.32 Kbytes Page：9 Pages	256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(3.3VOperating).	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004V1C-P	文件：137.32 Kbytes Page：9 Pages	256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(3.3VOperating).	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004V1D	文件：192.18 Kbytes Page：9 Pages	64Kx16BitHigh-SpeedCMOSStaticRAM(3.3VOperating)OperatedatCommercialandIndustrialTemperatureRanges. GENERALDESCRIPTION TheK6R1004V1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004V1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate	SamsungSamsung Group 三星三星半导体	Samsung

更多K6R1004V1D-TC供应商更新时间2024-6-3 16:04:00