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K4T51163QC-ZCCC中文资料PDF规格书
K4T51163QC-ZCCC规格书详情
The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.
The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination
Key Features
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
• 4 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
-PASR(Partial Array Self Refresh)
-50ohm ODT
-High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < T CASE < 95 °C
• All of Lead-free products are compliant for RoHS
产品属性
- 型号:
K4T51163QC-ZCCC
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
512Mb C-die DDR2 SDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
23+ |
BGA |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
SAMSUNG |
23+ |
BGA |
8230 |
全新原装真实库存含13点增值税票! |
询价 | ||
SAMSUNG |
2021+ |
BGA |
8220 |
原装正品假一罚十 |
询价 | ||
SAMSUNG |
07+ |
BGFA |
2 |
普通 |
询价 | ||
XILINX |
23+ |
TQFP |
4682 |
询价 | |||
SAMSUNG |
21+ |
BGA |
35200 |
一级代理/放心采购 |
询价 | ||
SAMSUNG |
22+ |
BGA |
360000 |
进口原装房间现货实库实数 |
询价 | ||
SAM |
650 |
询价 | |||||
SAMSUNG/三星 |
1948+ |
BGA |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
SAMSUNG |
1923+ |
BGA84 |
2000 |
公司原装现货特价处理 |
询价 |