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K4T1G164QQ-HCE7中文资料PDF规格书
K4T1G164QQ-HCE7规格书详情
The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.
Key Features
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
• 8 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6
• Programmable Additive Latency: 0, 1, 2, 3, 4, 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
- PASR(Partial Array Self Refresh)
- 50ohm ODT
- High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
• All of Lead-free products are compliant for RoHS
产品属性
- 型号:
K4T1G164QQ-HCE7
- 制造商:
Samsung Semiconductor
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
存储器 |
BGA |
40353 |
SAMSUNG原装存储芯片-诚信为本 |
询价 | ||
SAMSUNG/三星 |
23+ |
NA/ |
231 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SAMSUNG |
23+ |
BGA |
9960 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
SAMSUNG |
22+ |
BGA |
360000 |
进口原装房间现货实库实数 |
询价 | ||
SAMSUNG/三星 |
21+ |
BGA |
6000 |
十年专营,原装现货,假一赔十 |
询价 | ||
INFINEON |
18+ |
TSOP |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
SAMSUNG |
12+ |
FBGA84 |
2500 |
原装现货/特价 |
询价 | ||
SAMSUNG |
2023+ |
BGA |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
SAMSUNG/三星 |
2022+ |
BGA |
42631 |
询价 | |||
SAMSUNG/三星 |
21+ |
FBGA |
11600 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 |