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K4T1G084QE-HCLE7中文资料PDF规格书
K4T1G084QE-HCLE7规格书详情
The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.
Key Features
• JEDEC standard VDD= 1.8V ± 0.1V Power Supply
•VDDQ= 1.8V ± 0.1V
• 333MHz fCKfor 667Mb/sec/pin, 400MHz fCKfor 800Mb/sec/pin
• 8 Banks
• Posted CAS
• Programmable CASLatency: 3, 4, 5, 6
• Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
- 50ohm ODT
- High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE <95 °C
• All of products are Lead-Free, Halogen-Free, and RoHS compliant
产品属性
- 型号:
K4T1G084QE-HCLE7
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
1Gb E-die DDR2 SDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
23+ |
BGA |
20000 |
询价 | |||
SAMSUNG/三星 |
21+ |
BGA |
11600 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SEC |
1948+ |
BGA |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
SAMSUNG(三星) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
SEC |
2048+ |
BGA |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
SAMSUNG(三星) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | ||
SAMSUNG/三星 |
BGA |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
SAMSUNG |
2022 |
BGA |
2550 |
原厂原装正品,价格超越代理 |
询价 | ||
SAMSANG |
19+ |
BGA |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | ||
SAMSUNG |
2020+ |
BGA |
2060 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |