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K4S641632H-TC75中文资料PDF规格书
K4S641632H-TC75规格书详情
GENERAL DESCRIPTION
The K4S640432H / K4S640832H / K4S641632H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits, / 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM (x4,x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
产品属性
- 型号:
K4S641632H-TC75
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAM |
23+ |
NA |
20000 |
全新原装假一赔十 |
询价 | ||
SAMSUNG/三星 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
SAMSUNG |
21+ |
TSSOP |
1000 |
原装现货。假一赔十 |
询价 | ||
SAMSUNG/三星 |
22+ |
TSOP54 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
SAMSUNG/三星 |
23+ |
NA/ |
241 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SAMSUNG |
23+ |
标准封装 |
18000 |
询价 | |||
SANSUNG |
2048+ |
TSOP54 |
6541 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
SAMSUNG/三星 |
22+ |
TSOP54 |
9500 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
SAMSUNG/三星 |
21+ |
TSOP54 |
500 |
全新、原装 |
询价 | ||
SAMSUNG/三星 |
20+ |
TSOP |
90000 |
全新原装正品现货/价格合适 |
询价 |