K4H511638B-TC/LA2规格书应用电路贸易商-114ic电子网

首页 >K4H511638B>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业
K4H511638B-TC/LA2	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl	SamsungSamsung Group 三星三星半导体
K4H511638B-TC/LB0	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl	SamsungSamsung Group 三星三星半导体
K4H511638B-TC/LB3	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl	SamsungSamsung Group 三星三星半导体
K4H511638B-TC/LCC	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl	SamsungSamsung Group 三星三星半导体
K4H511638B-TCA0	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung Group 三星三星半导体
K4H511638B-TCA2	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung Group 三星三星半导体
K4H511638B-TCB0	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung Group 三星三星半导体
K4H511638B-TLA0	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung Group 三星三星半导体
K4H511638B-TLA2	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung Group 三星三星半导体
K4H511638B-TLB0	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •Differentialclockinputs(CKandCK) •DLLalignsDQandDQStransitionwithCKtransition •MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung Group 三星三星半导体
K4H511638B-UC/LA2	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl	SamsungSamsung Group 三星三星半导体
K4H511638B-UC/LB0	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl	SamsungSamsung Group 三星三星半导体
K4H511638B-UC/LB3	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl	SamsungSamsung Group 三星三星半导体
K4H511638B-UC/LCC	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl	SamsungSamsung Group 三星三星半导体
K4H511638B-G	文件：392.89 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification	SamsungSamsung Group 三星三星半导体
K4H511638B-GC/LA2	文件：392.89 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification	SamsungSamsung Group 三星三星半导体
K4H511638B-GC/LB0	文件：392.89 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification	SamsungSamsung Group 三星三星半导体
K4H511638B-GC/LB3	文件：392.89 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification	SamsungSamsung Group 三星三星半导体
K4H511638B-GC/LCC	文件：392.89 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification	SamsungSamsung Group 三星三星半导体
K4H511638B-ZC/LA2	文件：392.89 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification	SamsungSamsung Group 三星三星半导体

12 >>>

详细参数

型号：
K4H511638B
制造商：
SAMSUNG
制造商全称：
Samsung semiconductor
功能描述：
512Mb B-die DDR SDRAM Specification

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市维尔达电子有限公司	K4H511638B-TCA2	SAMSUNG	2023+		80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
瀚佳科技(深圳)有限公司	K4H511638B-TCA2	SAMSUNG	21+		35200	一级代理/放心采购	询价
贸泽芯城（深圳）电子科技有限公司	K4H511638B-TCA2	SAMSUNG/三星			13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市博浩通科技有限公司	K4H511638B-TCAC	samsung	23+	TSSOP	9980	价格优势/原装现货/客户至上/欢迎广大客户来电查询	询价
深圳市特顺芯科技有限公司	K4H511638B-TCB0	SAMSUNG	04+	TSOP	44		询价
深圳宇航军工半导体有限公司	K4H511638B-TCB0	SAMSANG	19+	TSSOP	256800	原厂代理渠道,每一颗芯片都可追溯原厂；	询价
深圳市百视威讯电子科技有限公司	K4H511638B-TCB0		23+	N/A	85100	正品授权货源可靠	询价
深圳市近平电子有限公司	K4H511638B-TCB0	SAMSUNG	6000	面议	19	DIP/SMD	询价
深圳市振芯物联科技有限公司	K4H511638B-TCB0	SAMSUNG	22+	TSSOP	32350	原装正品假一罚十公司现货	询价
深圳市安富世纪电子有限公司	K4H511638B-TCB0	SAMSUNG	21+	TSSOP	50000	全新原装正品现货,支持订货	询价

更多K4H511638B供应商更新时间2024-4-28 12:12:00

详细参数

相关规格书

相关库存