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K4H510838B-GC/LCC

512MbB-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838B-N

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

三星三星半导体

K4H510838B-NC/LCC

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

三星三星半导体

K4H510838B-TC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

K4H510838B-UC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

K4H510838B-VC/LCC

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

三星三星半导体

K4H510838B-ZC/LCC

512MbB-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-UC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-UCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-ULCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-ZCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-ZLCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838D

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D

DDRSDRAMProductGuide

ConsumerMemory

SamsungSamsung Group

三星三星半导体

K4H510838D-LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D-UC/LCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D-UC/LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D-UCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838F

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

K4H510838F

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung Group

三星三星半导体

供应商型号品牌批号封装库存备注价格
SMSUNG
22+
TSOP
2568
原装优势!绝对公司现货
询价
SAMSUNG
TSOP66
2809
正品原装--自家现货-实单可谈
询价
SAMSUNG
23+
TSOP-66
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
SAMSUNG
23+
TSOP-66
5000
原装正品,假一罚十
询价
SAMSUNG
2021+
TSOP
6015
百分百原装正品
询价
23+
N/A
85300
正品授权货源可靠
询价
SAMSUNG/三星
1824+
TSOP66
2592
原装现货专业代理,可以代拷程序
询价
SAMSUNG/三星
09+
TSOP-66
600
原装正品现货,可开发票,假一赔十
询价
SAMSUNG
22+
TSOP-66
2960
诚信交易大量库存现货
询价
SAMSUNG/三星
20+
TSOP-66
19570
原装优势主营型号-可开原型号增税票
询价
更多K4H510838F-LCB供应商 更新时间2024-5-14 16:33:00