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K4H510838B-GC/LCC

512MbB-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838B-N

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

三星三星半导体

K4H510838B-NC/LCC

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

三星三星半导体

K4H510838B-TC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

K4H510838B-UC/LCC

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

K4H510838B-VC/LCC

512MbB-dieDDRSDRAMSpecification54sTSOP-II(400milx441mil)

SamsungSamsung Group

三星三星半导体

K4H510838B-ZC/LCC

512MbB-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-UC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-UCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-ULCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-ZCCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838C-ZLCC

512MbC-dieDDRSDRAMSpecification

SamsungSamsung Group

三星三星半导体

K4H510838D

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D

DDRSDRAMProductGuide

ConsumerMemory

SamsungSamsung Group

三星三星半导体

K4H510838D-LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D-UC/LCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D-UC/LCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838D-UCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung Group

三星三星半导体

K4H510838F

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

K4H510838F

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung Group

三星三星半导体

供应商型号品牌批号封装库存备注价格
SAMSUNG/三星
1948+
TSSOP
6852
只做原装正品现货!或订货假一赔十!
询价
SAMSUNG/三星
23+
SOP
50000
全新原装正品现货,支持订货
询价
SAMSUNG/三星
22+
TSSOP
354000
询价
SANSUNG
16+
TSOP
66
全新原装现货
询价
SANSUNG
TSOP
9856
只做原装货值得信赖
询价
SANSUNG
2020+
TSOP
350000
100%进口原装正品公司现货库存
询价
23+
N/A
46590
正品授权货源可靠
询价
SANSUNG
TSOP
68900
原包原标签100%进口原装常备现货!
询价
SAMSUNG/三星
TSOP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SAMSUNG/三星
23+
TSOP
89630
当天发货全新原装现货
询价
更多K4H510838D-UCCCOOO供应商 更新时间2024-5-13 16:59:00