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K4E661611D-TC60中文资料PDF规格书
K4E661611D-TC60规格书详情
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-50 or -60) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- K4E661611D-TC(5.0V, 8K Ref.)
- K4E641611D-TC(5.0V, 4K Ref.)
• Active Power Dissipation
• Refresh Cycles
• Performance Range
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) package
• +5.0V±10 power supply
产品属性
- 型号:
K4E661611D-TC60
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
4M x 16bit CMOS Dynamic RAM with Extended Data Out
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
21+ |
BGA |
10000 |
原装现货假一罚十 |
询价 | ||
SAMSUNG |
BGA |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
SAN |
SSOP |
2100 |
优势库存 |
询价 | |||
SAMSUNG |
00+ |
BGA |
1172 |
询价 | |||
SAMSUNG/三星 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
SAMSUNG/三星 |
TSOP-50 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
SAMSANG |
19+ |
BGA |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | ||
SAMSUNG/三星 |
2022 |
BGA |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
SAMSUNG |
22+ |
BGA |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
SAMSUNG |
2023+ |
BGA |
3000 |
进口原装现货 |
询价 |