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K4D263238A

1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Ais134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp

SamsungSamsung Group

三星三星半导体

K4D263238D

1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Dis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh

SamsungSamsung Group

三星三星半导体

K4D263238E

1Mx32Bitx4BanksGraphicDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Eis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp

SamsungSamsung Group

三星三星半导体

K4D263238F

1Mx32Bitx4BanksDoubleDataRateSynchronousDRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Fis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhigh

SamsungSamsung Group

三星三星半导体

K4D263238G-GC

128MbitGDDRSDRAM

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

K4D263238G-VC

128MbitGDDRSDRAM

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238Gis134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhi

SamsungSamsung Group

三星三星半导体

K4D263238K

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

K4D263238M

1Mx32Bitx4BanksDoubleDataRateSynchronousRAMwithBi-directionalDataStrobeandDLL

GENERALDESCRIPTION FOR1Mx32Bitx4BankDDRSDRAM TheK4D263238is134,217,728bitsofhypersynchronousdatarateDynamicRAMorganizedas4x1,048,576wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeallowextremelyhighp

SamsungSamsung Group

三星三星半导体

供应商型号品牌批号封装库存备注价格
BGA
936
询价
SAMSUNG/三星
22+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
SAMSUNG
O6
BGA
7
询价
SAMSUNG
2020+
BGA
350000
100%进口原装正品公司现货库存
询价
SAMSUNG
2023+
BGA
50000
原装现货
询价
SAMSU
24+
BGA
5000
全现原装公司现货
询价
SAMSANG
19+
BGA
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
SAMSUNG/三星
BGA
265209
假一罚十原包原标签常备现货!
询价
SAMSUNG/三星
23+
BGA
50000
全新原装正品现货,支持订货
询价
SAMSU
21+
BGA
10000
原装现货假一罚十
询价
更多K4D263238G/E/K供应商 更新时间2024-5-30 13:00:00