| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NPNGeneralPurposeAmplifier Thisdeviceisdesignedasageneralpurposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | PFSShenzhen Ping Sheng Electronics Co., Ltd. 平盛电子深圳市平盛电子有限公司 | PFS | ||
NPNSiliconSwitchingTransistors | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
SOT-23 | GSMEGuilin Strong Micro-Electronics Co., Ltd. Guilin Strong Micro-Electronics Co., Ltd. | GSME | ||
NPNGeneralPurposeAmplifier | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
NPNGENERALPURPOSESWITCHINGTRANSISTOR FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=200mA •TransitionfrequencyfT>300MHz@IC=10mAdc,VCE=20Vdc,f=100MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •LeadfreeincomplywithEURoHS2002/9 | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
40VMatchedPairNPNSmallSignalTransistors | FUTUREWAFER FutureWafer Tech Co.,Ltd | FUTUREWAFER | ||
NPNPlasticEncapsulatedTransistor | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
SOT-363Plastic-EncapsulateTransistors FEATURES eEpitaxialplanardieconstruction eIdealforlowpoweramplificationandswitching | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
Epitaxialplanardieconstruction | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | YEASHIN | ||
NPNSiliconGeneralPurposeDoubleTransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
Smallsignalapplication | KODENSHIKodenshi Group 可天士可天士光电子集团 | KODENSHI | ||
40VNPNSMALLSIGNALTRANSISTORINDFN0806 Features •BVCEO>40V •IC=200mAhighCollectorCurrent •PD=435mWPowerDissipation •0.48mm2packagefootprint,16timessmallerthanSOT23 •0.4mmheightpackageminimizingoff-boardprofile •ComplementaryPNPTypeMMBT3906FA •TotallyLead-Free&FullyRoHScompliant(Notes1 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
GeneralPurposeTransistor FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryPNPTypeAvailable(MMBT3906FW) ●IdealforMediumPowerAmplificationandSwitching | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
40VNPNSMALLSIGNALTRANSISTORINDFN0606 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features Lowcurrent,Lowvoltage.HFProduct. Applications Generalpurposeamplifierandswitching. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
GeneralPurposeTransistor Leadfreeproduct | ZOWIEZOWIE 智威智威科技股份有限公司 | ZOWIE | ||
GENERALPURPOSETRANSISTORS Features -Epitaxialplanardieconstruction -Ascomplementarytype,thePNPtransistorMMBT3906-Gisrecommended | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
GeneralPurposeTransistor Halogen-freetype Leadfreeproduct | ZOWIEZOWIE 智威智威科技股份有限公司 | ZOWIE | ||
NPNTransistors | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
2019 |
TO-3P |
55000 |
绝对原装正品假一罚十! |
询价 | ||
VBSEMI |
19+ |
TO-3P |
29600 |
绝对原装现货,价格优势! |
询价 | ||
23+ |
N/A |
64910 |
正品授权货源可靠 |
询价 | |||
TOSHIBA/东芝 |
21+ |
TO-3P |
10000 |
原装现货假一罚十 |
询价 | ||
TOS |
23+ |
TO-3P |
8000 |
只做原装现货 |
询价 | ||
SEMITEC/石冢 |
1950+ |
98552 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
SEMITEC/石冢 |
23+ |
40000 |
全新原装数量均有多电话咨询 |
询价 | |||
SEMITEC/石冢 |
22+ |
1000000 |
电感只做原装现货 提供一站式配套供货 中利达 |
询价 | |||
SEMITEC |
24+25+/26+27+ |
车规-被动器件 |
96800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
VISHAY(威世) |
23+ |
插件 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 |
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