| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
CeramicStand-offInsulatorsforRF-Equipment CeramicStand-offInsulatorsforRF-Equipment MATERIAL: Stand-offinsulatorelementsmadefromClass1Ceramic material(C221-IEC60672-3),bodycompletelyglazed. Connectionterminals:brass OPERATINGCONDITIONS: Maximumoperatingtemperature+100°C Maximumcompressive | VishayVishay Siliconix 威世科技 | Vishay | ||
Triaxial(F)BulkheadReceptacle | POMONA Pomona Electronics | POMONA | ||
HighVoltageOPERATIONALAMPLIFIERS | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
Nytye®MountingPlatforms | Heyco Heyco | Heyco | ||
BulkSimplexFiberOpticCable | GLENAIRGlenair, Inc. 格伦尔 | GLENAIR | ||
BulkSimplexFiberOpticCable | GLENAIRGlenair, Inc. 格伦尔 | GLENAIR | ||
80MBYTES/SECALDCDATACOMPRESSIONCOPROCESSORIC | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
33mW3AHighSideLoadSwitches | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
33mW3AHighSideLoadSwitches | ANPECAnpec Electronics Corp 茂达电子 | ANPEC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=7.5A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FixedAttenuatorPads Description TheATN3580seriesofattenuatorchipsincorporatethinfilmresistorsonhighresistivitysiliconchipstoachieveprecisionattenuation,tightflatnessandhighreturnlossto40GHz.ThedesignusesabalancedTEEresistivestructuretoassurebroadbandwidthperformance.Thethin | SKYWORKSSkyworks Solutions Inc. 思佳讯美国思佳讯公司 | SKYWORKS | ||
IntegratedWirelessLANModules | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
Phase-controlthyristors | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Phase-controlthyristors | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Phase-controlthyristors | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Phase-controlthyristors | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Phase-controlthyristors | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
49000 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-220F |
55000 |
绝对原装正品假一罚十! |
询价 | ||
FUJI |
23+ |
TO-TO-220F |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
FUJI/富士电机 |
23+ |
TO-220F |
10000 |
公司只做原装正品 |
询价 | ||
FUJITSU/富士通 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FUJITSU/富士通 |
21+ |
TO-220F |
10000 |
原装现货假一罚十 |
询价 | ||
09 |
22+ |
TO-220F |
3000 |
原装现货假一赔十 |
询价 | ||
FUJITSU/富士通 |
2022 |
TO-220F |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
FUJI/富士电机 |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
询价 | ||
FUJI/富士 |
TO-220F |
68900 |
原包原标签100%进口原装常备现货! |
询价 |
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