首页 >K3100GBSM>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

CA3100E

38MHz,OperationalAmplifier

Description TheCA3100isalargesignalwideband,highspeedoperationalamplifierwhichhasaunitygaincrossover frequency(fT)ofapproximately38MHzandanopenloop,3dBcornerfrequencyofapproximately110kHz. Features HighOpenLoopGainatVideo Frequencies......

HARRIS

HARRIS corporation

CA3100M

38MHz,OperationalAmplifier

Description TheCA3100isalargesignalwideband,highspeedoperationalamplifierwhichhasaunitygaincrossover frequency(fT)ofapproximately38MHzandanopenloop,3dBcornerfrequencyofapproximately110kHz. Features HighOpenLoopGainatVideo Frequencies......

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

CA3100M

38MHz,OperationalAmplifier

Description TheCA3100isalargesignalwideband,highspeedoperationalamplifierwhichhasaunitygaincrossover frequency(fT)ofapproximately38MHzandanopenloop,3dBcornerfrequencyofapproximately110kHz. Features HighOpenLoopGainatVideo Frequencies......

HARRIS

HARRIS corporation

CA3100T

38MHz,OperationalAmplifier

Description TheCA3100isalargesignalwideband,highspeedoperationalamplifierwhichhasaunitygaincrossover frequency(fT)ofapproximately38MHzandanopenloop,3dBcornerfrequencyofapproximately110kHz. Features HighOpenLoopGainatVideo Frequencies......

HARRIS

HARRIS corporation

CA3100T

38MHz,OperationalAmplifier

Description TheCA3100isalargesignalwideband,highspeedoperationalamplifierwhichhasaunitygaincrossover frequency(fT)ofapproximately38MHzandanopenloop,3dBcornerfrequencyofapproximately110kHz. Features HighOpenLoopGainatVideo Frequencies......

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

CAR3100A

ITTCannonistheforemostmanufac-turerofMSandMStypeconnectorswiththewidestrangeofconnectorstyles

ITTITT Industries

ITT工业

CBB3100BKAHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技威世科技半导体

CBB3100BKAKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技威世科技半导体

CBB3100BKGHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技威世科技半导体

CBB3100BKGKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技威世科技半导体

CBB3100BLAHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技威世科技半导体

CBB3100BLAKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技威世科技半导体

CBB3100BLGHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技威世科技半导体

CBB3100BLGKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技威世科技半导体

CBB3100BMAHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技威世科技半导体

CBB3100BMAKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技威世科技半导体

CBB3100BMGHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技威世科技半导体

CBB3100BMGKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技威世科技半导体

CBB3100CKAHWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技威世科技半导体

CBB3100CKAKWS

ThinFilmBinaryMOSCapacitors

FEATURES •Wirebondable •Uservalueselection •Fivecapacitorsona0.019x0.048(CBB) or0.044x0.044(CBC)chip •Casesize:0402,0404 •Capacitancerange:upto93pFinbinary increments •Dielectric:silicondioxide •Lowdielectricloss •Substrate:siliconwithgoldbacking

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    K3100GBSM

  • 制造商:

    MTRONPTI

  • 制造商全称:

    MTRONPTI

  • 功能描述:

    14 pin DIP, 5.0 Volt, Clock Oscillator

供应商型号品牌批号封装库存备注价格
SANYO
6000
面议
19
TO-220F
询价
NEC
23+
TO-220F
8000
只做原装现货
询价
NEC
23+
TO220
1556
专业优势供应
询价
NEC
15628
TO-220
17
只做进口原装现货!假一赔十!
询价
VB
2019
TO220AB
55000
绝对原装正品假一罚十!
询价
NEC
22+
TO-220
8000
原装正品支持实单
询价
VBSEMI
19+
TO220AB
29600
绝对原装现货,价格优势!
询价
KINGWELL
SOT-23
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NEC
23+
TO-TO-220F
33500
全新原装真实库存含13点增值税票!
询价
NEC
23+
TO-220F
10000
公司只做原装正品
询价
更多K3100GBSM供应商 更新时间2024-6-17 16:21:00