| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BOX-PCWideTemperature,AtomE3845,Fanless | Contec Contec | Contec | ||
PTCthermistorsforovercurrentprotection | EPCOSEPCOS - TDK Electronics 爱普科斯爱普科斯与TDK元件事业部 | EPCOS | ||
1DDR3SO-DIMMsupportsupto4GBmemorycapacity | AXIOMTEKAxiomtek Co., Ltd. 艾讯股份有限公司 | AXIOMTEK | ||
ZIOconnector | AXIOMTEKAxiomtek Co., Ltd. 艾讯股份有限公司 | AXIOMTEK | ||
SMDSchottkyBarrierDiode ReverseVoltage:20~60Volts ForwardCurrent:8A Features: •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-OUtilizingFlame RetardantEpoxyMoldingCompound. •Forsurfacemountedapplications. •ExceedsenviromentalstandardsofMIL-S-19500/228 •Lo | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,4.1A,RDS(ON)=1.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,4.5A,RDS(ON)=1.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■500V,4.5A,RDS(ON)=1.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
8USB2.0ports | AXIOMTEKAxiomtek Co., Ltd. 艾讯股份有限公司 | AXIOMTEK | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,4.1A,RDS(ON)=1.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 500V,4.5A,RDS(ON)=1.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■500V,4.5A,RDS(ON)=1.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
详细参数
- 型号：
JCS830
- 制造商：
JSMC
- 制造商全称：
JILIN SINO-MICROELECTRONICS CO., LTD.
- 功能描述：
N-CHANNEL MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
JS |
1822+ |
DPAK |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
JS |
18+ |
DPAK |
41200 |
原装正品,现货特价 |
询价 | ||
VB |
2019 |
DPAK |
55000 |
绝对原装正品假一罚十! |
询价 | ||
J |
23+ |
IPAK |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
Sino-Micr |
2020+ |
TO-251 |
50860 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
VBSEMI/台湾微碧 |
T0220F |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
J |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
VBSEMI/台湾微碧 |
23+ |
T0220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VB |
21+ |
TO-220F |
10000 |
原装现货假一罚十 |
询价 | ||
SINO-MICRO |
2022+ |
TO-220 |
32500 |
原厂代理 终端免费提供样品 |
询价 |
相关规格书
更多- JCS830B-O-B-N-B
- JCS830F-O-F-N-B
- JCS830S-O-S-N-B
- JCS840
- JCS840C-O-C-N-B
- JCS840S-O-S-N-B
- JCS8N60B
- JCS8N60CB-O-C-N-B
- JCS8N60FB-O-F-N-B
- JCS8N60S-O-S-N-B
- JCS8N65CB-O-C-N-B
- JCS9N50CT-O-C-N-B
- JCS9N50T
- JCS9N90ANT-O-AN-N-B
- JCS9N90FT-O-F-N-B
- JCT-1/2E
- JCT-1-1/2E
- JCT1255
- JCT1255Z
- JCT1655
- JCT1655Z
- JCT-3E
- JCT6055
- JCT6055Z
- JCT625F
- JCU-100E
- JCU-125E
- JCU-15E
- JCU-200E
- JCV1B
- JCV1LB
- JCV1LR
- JCV1LY
- JCV1W
- JCV2B
- JCV2LB
- JCV2LR
- JCV2Y
- JCVI-10LP
- JCVI-24LP
- JCVP-10LP
- JCW-1/2E
- JCW-159/U(43)
- JCXYY
- JCY-100E
相关库存
更多- JCS830C-O-C-N-B
- JCS830R-O-R-N-B
- JCS830V-O-V-N-B
- JCS840B-O-B-N-B
- JCS840F-O-F-N-B
- JCS8N60
- JCS8N60B-O-B-N-B
- JCS8N60C-O-C-N-B
- JCS8N60F-O-F-N-B
- JCS8N65B
- JCS8N65FB-O-F-N-B
- JCS9N50FT-O-F-N-B
- JCS9N90ANT
- JCS9N90FT
- JCSF5015N291
- JCT-10E
- JCT-1-1-2E
- JCT1255Y
- JCT-16128-3
- JCT1655Y
- JCT-1E
- JCT-5E
- JCT6055Y
- JCT625
- JCT625S
- JCU-10E
- JCU-150E
- JCU-175E
- JCU-20E
- JCV1G
- JCV1LG
- JCV1LW
- JCV1R
- JCV1Y
- JCV2G
- JCV2LG
- JCV2W
- JCVI-10L
- JCVI-16L
- JCVP-06L
- JCVP-24LP
- JCW-1-2E
- JCXYY
- JCY-1/2E
- JCY-10E
