| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
MAINCHARACTERISTICS | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
MAINCHARACTERISTICS | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
JJW | ||||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2.0A •RDS(ON)=4.4Ω(Max)@VGS | KECKEC CORPORATION KEC株式会社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2.0A •RDS(ON)=4.4Ω(Max)@VGS | KECKEC CORPORATION KEC株式会社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2.0A •RDS(ON)=4.4Ω(Max)@VGS | KECKEC CORPORATION KEC株式会社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2.0A •RDS(ON)=4.4Ω(Max)@VGS | KECKEC CORPORATION KEC株式会社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2A •Drai | KECKEC CORPORATION KEC株式会社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2A •Drai | KECKEC CORPORATION KEC株式会社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2.0A •RDS(ON)=4.4Ω(Max)@VGS | KECKEC CORPORATION KEC株式会社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2.0A •RDS(ON)=4.4Ω(Max)@VGS | KECKEC CORPORATION KEC株式会社 | KEC | ||
ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics. GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=0.70A •RDS(ON)=4.4Ω(Max)@VGS | KECKEC CORPORATION KEC株式会社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=600V,ID=2A •Drai | KECKEC CORPORATION KEC株式会社 | KEC |
详细参数
- 型号：
JCS2N60F
- 制造商：
JSMC
- 功能描述：
MOS NMOS 2A 600V TO-220MF
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
吉林华微 |
2016+ |
TO-220F |
4560 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
VB |
2019 |
T0-220FP |
55000 |
绝对原装正品假一罚十! |
询价 | ||
HUAWEI |
23+ |
TO-TO-220F |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
Sino |
2020+ |
TO-220F |
49660 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
HUAWEI |
23+ |
TO-220F |
10000 |
公司只做原装正品 |
询价 | ||
VB |
21+ |
T0-220FP |
10000 |
原装现货假一罚十 |
询价 | ||
华微 |
2048+ |
TO-220F |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
aos |
2023+ |
TO-220F |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
JCS |
23+ |
TO-220F |
89630 |
当天发货全新原装现货 |
询价 | ||
HUAWEI |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
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更多- JCS2R
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