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FQP12N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQP12N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP12N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance

KERSEMI

Kersemi Electronic Co., Ltd.

FQP12N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQP12N60C

FQP12N60C/FQPF12N60C

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF12N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF12N60

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF12N60C

FQP12N60C/FQPF12N60C

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF12N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF12N60C

600VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF12N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductorÿsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance

KERSEMI

Kersemi Electronic Co., Ltd.

FQPF12N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.65Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF12N60C

iscSiliconNPNPowerTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.65Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQPF12N60CT

600VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQPF12N60T

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FSA12N60A

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

H12N60

N-ChannelPowerMOSFET(600V,12A)

Features •H10N60FisaHighvoltageNChannelenhancementmodepowerMOSFETchipfabricatedinadvancedsiliconepitaxialplanartechnology •Advancedterminationschemetoprovideenhancedvoltageblockingcapability •AvalancheEnergySpecified •SourcetoDrainDiodeRecoveryTimeCo

HSMC

华昕

HFH12N60

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy

HuashanHuashan Electronic Devices Co

华汕电子器件

HFP12N60S

600VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFP12N60U

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

详细参数

  • 型号:

    JCS12N60FT-O-F-N-B

  • 制造商:

    JSMC

  • 制造商全称:

    JILIN SINO-MICROELECTRONICS CO., LTD.

  • 功能描述:

    N-CHANNEL MOSFET

供应商型号品牌批号封装库存备注价格
VB
2019
TO-220F
55000
绝对原装正品假一罚十!
询价
J
23+
TO-TO-220MF
12300
全新原装真实库存含13点增值税票!
询价
Sino-Micro
2020+
TO-220F
49930
公司代理品牌,原装现货超低价清仓!
询价
NXP/恩智浦
23+
D2PAK
69820
终端可以免费供样,支持BOM配单!
询价
Sino-Micro
22+
TO-220F
6000
十年配单,只做原装
询价
华微
21+ROHS
TO-220F
94999
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SINO-MICRO
2022+
TO-220F
79999
询价
Sino-Micro
23+
TO-220F
6000
原装正品,支持实单
询价
Sino-Micro
22+
TO-220F
25000
只做原装进口现货,专注配单
询价
SINO
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
更多JCS12N60FT-O-F-N-B供应商 更新时间2024-6-15 11:30:00