零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
JAN2N6802 | N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DESCRIPTION ThisfamilyofswitchingtransistorsismilitaryqualifieduptotheJANTXVlevelforhighreliabilityapplications.The2N6798partnumberisalsoqualifiedtotheJANSlevel.ThesedevicesarealsoavailableinalowprofileU-18LCCsurfacemountpackage.Microsemialsooffersnumer | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
JAN2N6802 | N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DESCRIPTION ThisfamilyofswitchingtransistorsismilitaryqualifieduptotheJANTXVlevelforhighreliabilityapplications.The2N6798partnumberisalsoqualifiedtotheJANSlevel.ThesedevicesarealsoavailableinalowprofileU-18LCCsurfacemountpackage.Microsemialsooffersnumer | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DESCRIPTION ThisfamilyofswitchingtransistorsismilitaryqualifieduptotheJANTXVlevelforhighreliabilityapplications.The2N6798partnumberisalsoqualifiedtotheJANSlevel.ThesedevicesarealsoavailableinalowprofileU-18LCCsurfacemountpackage.Microsemialsooffersnumer | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
100V,200V,400V&500V,N-Channel,EnhancementModeMOSFETPowerTransistor [Omnirel] DESCRIPTION ThishermeticallypackagedQPLproductfeaturesthelatestadvancedMOSFETtechnology.ItisideallysuitedforMilitaryrequirementswheresmallsize,highperformanceandhighreliabilityarerequired,andinapplicationssuchasswitchingpowersupplies,motorcontrols, | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
N-CHANNELMOSFET DESCRIPTION ThisfamilyofswitchingtransistorsismilitaryqualifieduptotheJANTXVlevelforhighreliabilityapplications.The2N6798partnumberisalsoqualifiedtotheJANSlevel.ThesedevicesarealsoavailableinalowprofileU-18LCCsurfacemountpackage.Microsemialsooffersnumer | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N?밅HANNELENHANCEMENT FEATURES •AVALANCHEENERGYRATED •HERMETICALLYSEALED •DYNAMICdv/dtRATING •SIMPLEDRIVEREQUIREMENTS | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFIELD-EFFECTTRANSISTORS FEATURES •AVALANCHEENERGYRATED •HERMETICALLYSEALED •DYNAMICdv/dtRATING •SIMPLEDRIVEREQUIREMENTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET FEATURES •AVALANCHEENERGYRATED •HERMETICALLYSEALED •DYNAMICdv/dtRATING •SIMPLEDRIVEREQUIREMENTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-CHANNELMOSFET DESCRIPTION ThisfamilyofswitchingtransistorsismilitaryqualifieduptotheJANTXVlevelforhighreliabilityapplications.The2N6798partnumberisalsoqualifiedtotheJANSlevel.ThesedevicesarealsoavailableinalowprofileU-18LCCsurfacemountpackage.Microsemialsooffersnumer | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-CHANNELMOSFETQualifiedperMIL-PRF-19500/557 DESCRIPTION ThisfamilyofswitchingtransistorsismilitaryqualifieduptotheJANTXVlevelforhighreliabilityapplications.The2N6798partnumberisalsoqualifiedtotheJANSlevel.ThesedevicesarealsoavailableinalowprofileU-18LCCsurfacemountpackage.Microsemialsooffersnumer | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RepetitiveAvalancheRatings | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-CHANNELMOSFETQualifiedperMIL-PRF-19500/557 DESCRIPTION ThisfamilyofswitchingtransistorsismilitaryqualifieduptotheJANTXVlevelforhighreliabilityapplications.The2N6798partnumberisalsoqualifiedtotheJANSlevel.ThesedevicesarealsoavailableinalowprofileU-18LCCsurfacemountpackage.Microsemialsooffersnumer | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=1.5ohm,Id=2.5A) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
100V,200V,400V&500V,N-Channel,EnhancementModeMOSFETPowerTransistor [Omnirel] DESCRIPTION ThishermeticallypackagedQPLproductfeaturesthelatestadvancedMOSFETtechnology.ItisideallysuitedforMilitaryrequirementswheresmallsize,highperformanceandhighreliabilityarerequired,andinapplicationssuchasswitchingpowersupplies,motorcontrols, | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
HEXFETTRANSISTOR 500Volt,1.50Ω,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-CHANNELMOSFETQualifiedperMIL-PRF-19500/557 DESCRIPTION ThisfamilyofswitchingtransistorsismilitaryqualifieduptotheJANTXVlevelforhighreliabilityapplications.The2N6798partnumberisalsoqualifiedtotheJANSlevel.ThesedevicesarealsoavailableinalowprofileU-18LCCsurfacemountpackage.Microsemialsooffersnumer | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
100V,200V,400V&500V,N-Channel,EnhancementModeMOSFETPowerTransistor [Omnirel] DESCRIPTION ThishermeticallypackagedQPLproductfeaturesthelatestadvancedMOSFETtechnology.ItisideallysuitedforMilitaryrequirementswheresmallsize,highperformanceandhighreliabilityarerequired,andinapplicationssuchasswitchingpowersupplies,motorcontrols, | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=1.5ohm,Id=2.5A) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsofe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTERSIL |
02+ |
CAN3 |
56 |
询价 | |||
MOTO |
CAN |
1292 |
优势库存 |
询价 | |||
MICROSEMI |
638 |
原装正品 |
询价 | ||||
Microsemi Corporation |
22+ |
TO205AF Metal Can |
9000 |
原厂渠道,现货配单 |
询价 | ||
Microsemi Corporation |
21+ |
TO205AF Metal Can |
13880 |
公司只售原装,支持实单 |
询价 | ||
INTERSIL |
2022+ |
CAN3 |
1800 |
只售进口原装公司现货! |
询价 | ||
Microsemi Corporation |
23+ |
TO205AF Metal Can |
9000 |
原装正品,支持实单 |
询价 | ||
Microsemi Corporation |
2022+ |
TO-205AF 金属罐 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IR |
23+ |
TO-3 |
8000 |
只做原装现货 |
询价 | ||
IR |
17+ |
MODULE |
2100 |
公司大量全新现货 随时可以发货 |
询价 |
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