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JAN1N3007R

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

JAN1N3007RA

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

JAN1N3007RB

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

JAN1N3007RC

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

JAN1N3007RD

10 WATT ZENER DIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

JAN1N3007RB

包装:散装 封装/外壳:DO-203AA,DO-4,接线柱 类别:分立半导体产品 二极管 - 齐纳 - 单 描述:ZENER DIODE

MicrochipMicrochip Technology Inc.

微芯科技微芯科技股份有限公司

Microchip

1N3007

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

1N3007

10WATTZENERDIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

NAINA

1N3007

Glasspassivatedjunction

Features ●Glasspassivatedjunction ●Goodclampingability ●AvailableinNormalandReversepolarity ●MetricandUNFthreadtype ElectricalData ●DCPowerDissipation:10Watts ●VoltageRange6.8–200Volts ●Operatingtemperature-65°Cto+175°C ●Derating:80mW/oCabove50°C ●

AMERICASEMI

America Semiconductor, LLC

AMERICASEMI

1N3007

10WZenerDiodes

AMERICASEMI

America Semiconductor, LLC

AMERICASEMI

1N3007

ZENERDIODES

ZENERDIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

1N3007A

Ref/RegDiode,5WP(D)S10W

Description:Ref/RegDiode,5W

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

1N3007A

10WATTZENERDIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

NAINA

1N3007A

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

1N3007AR

10WATTZENERDIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

NAINA

1N3007B

10WATTZENERDIODES

10WATTZENERDIODES

NAINA

Naina Semiconductor ltd.

NAINA

1N3007B

SILICON10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinking

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

1N3007B

10WATTZENERDIODES

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

1N3007B

Silicon10WATTZenerDiodes

DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

1N3007B

ZenerDiodes

NAINA

Naina Semiconductor ltd.

NAINA

详细参数

  • 型号:

    JAN1N3007R

  • 制造商:

    MICROSEMI

  • 制造商全称:

    Microsemi Corporation

  • 功能描述:

    10 WATT ZENER DIODES

供应商型号品牌批号封装库存备注价格
MSC
18+
MODULE
2050
公司大量全新原装 正品 随时可以发货
询价
CGG
1
全新原装 货期两周
询价
IR
22+
6000
终端可免费供样,支持BOM配单
询价
IR
23+
8000
只做原装现货
询价
MSC
24+25+/26+27+
车规-模块MODULE
1880
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
MICROSEMI
638
原装正品
询价
MICROSEMI
2018+
SMD
23
“芯达集团”专营军工百分之百原装进口
询价
Microsemi/美高森美
专业军工
NA
1000
只做原装正品军工级部分订货
询价
MICROSEMI
三年内
1983
纳立只做原装正品13590203865
询价
Microsemi/美高森美
专业军工
NA
1000
只做原装正品
询价
更多JAN1N3007R供应商 更新时间2024-4-28 15:03:00