| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
POWERTRANSISTORS(15A,160W) General-PurposePowerAmplifierandSwitchingApplications FEATURES: *LowCollector-EmitterSaturationVoltage- VCE(SAT)=1.0V(Max.)@IC=7.0A *ExecllentDCCurrentGain- hFE=10~100@IC=6.0A | MOSPEC MOSPEC | MOSPEC | ||
SiliconNPNHigh-PowerTransistor SiliconNPNHigh-PowerTransistor ...designedforgeneral–purposepoweramplifierandswitchingapplications. •Collector–EmitterSustainingVoltage—VCEO(sus)=80Vdc(Min) •DCCurrentGain—hFE=20(Min)@IC=6.0Adc •LowCollector—EmitterSaturationVoltage—VCE(sat)=1.0V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerTransistors PowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Complementtotype2N58792N5880 APPLICATIONS •Forgeneral-purposepoweramplifierandswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Complementtotype2N58792N5880 APPLICATIONS •Forgeneral-purposepoweramplifierandswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | JMNIC | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Lowcollectorsaturationvoltage •Complementtotype2N58792N5880 APPLICATIONS •Forgeneral-purposepoweramplifierandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS General-PurposePowerAmplifierandSwitchingApplications FEATURES: *LowCollector-EmitterSaturationVoltage- VCE(SAT)=1.0V(Max.)@IC=7.0A *ExecllentDCCurrentGain- hFE=10~100@IC=6.0A | bocaBoca semiconductor corporation 博卡博卡半导体公司 | boca | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS ...designedforgeneral-purposepoweramplifierandswitchingapplications. ●Collector-EmitterSustainingVoltage- VCEO(sus)=60Vdc(Min)-2N5879,2N5881 =60Vdc(Min)-2N5880,2N5882 ●DCCurrentGain- hFE=20 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT/RCA |
02+ |
TO-3 |
399 |
询价 |
相关规格书
更多- J310
- JANTX2N2222A
- JCM5046
- JLC1562BN
- JM38510_11005BCA
- JM38510_11604BCA
- JM38510_19001BXA
- JM38510_30102BCA
- JM38510_30501BCA
- JM38510_30903BEA
- JM38510_32403BRA
- JRC2904
- JRC4558
- JRC4580
- JS28F640J3D75
- K140
- K4200
- K4D263238F-UC50
- K4F151611D-JC60
- K4S161622D-TC80
- K4S161622H-UC60
- K4S281632E-TC75
- K4S281632F-UC60
- K4S511632B-TC75
- K4S560832E-TC75
- K4S561632E-TC75
- K4S640832F-TC75
- K4S641632D-TC80
- K4S641632F-TC60
- K4S641632H-TC60
- K4S641632H-UC60
- K4S643232C-TC80
- K4S643232E-TC60
- K4S643232F-TC70
- K4S643232H-UC60
- K6R1008V1C-TC12
- K6R1016C1C-JC15
- K6R1016C1C-TC15
- K6R1016V1C-TC10
- K6R1016V1C-TC15
- K6T0808C1D-TB70
- K6T1008C2E-GB55
- K6T1008C2E-TB55
- K6T1008U2E-YF10
- K6T4008V1C-YF70
相关库存
更多- JAN2N2222A
- JCM5041
- JCM5052
- JM38510
- JM38510_11201BCA
- JM38510_12302BEA
- JM38510_30001BCA
- JM38510_30106BEA
- JM38510_30701BEA
- JM38510_31004BCA
- JRC2903
- JRC386
- JRC4558D
- JS28F128J3D75
- K101
- K2335
- K4D263238F-QC50
- K4E151611D-JC60
- K4S161622D-TC60
- K4S161622H-TC60
- K4S281632D-TC75
- K4S281632F-TC75
- K4S281632F-UC75
- K4S560432E-TC75
- K4S561632D-TC75
- K4S561632E-UC75
- K4S641632D-TC1L
- K4S641632E-TC75
- K4S641632F-TC75
- K4S641632H-TC75
- K4S641632H-UC75
- K4S643232E-TC50
- K4S643232F-TC60
- K4S643232H-TC60
- K6R1008C1C-JC15
- K6R1008V1D-JC10
- K6R1016C1C-TC12
- K6R1016V1C-JC15
- K6R1016V1C-TC12
- K6R4016V1D-TC10
- K6T0808C1D-TF70
- K6T1008C2E-GB70
- K6T1008C2E-TB70
- K6T1008V2E-TB70
- K6X1008C2D-GF55
