MI-PC243-MY

MilitaryDC-DCPowerSupplies

MI-QC243-ISY

MilitaryDC-DCPowerSupplies

MI-QC243-IUY

MilitaryDC-DCPowerSupplies

MI-QC243-IVX

MilitaryDC-DCPowerSupplies

MI-QC243-IVY

MilitaryDC-DCPowerSupplies

MI-QC243-IWY

MilitaryDC-DCPowerSupplies

MI-QC243-IXY

MilitaryDC-DCPowerSupplies

MI-QC243-IYY

MilitaryDC-DCPowerSupplies

MI-QC243-MSY

MilitaryDC-DCPowerSupplies

MI-QC243-MUY

MilitaryDC-DCPowerSupplies

MI-QC243-MVY

MilitaryDC-DCPowerSupplies

MI-QC243-MWY

MilitaryDC-DCPowerSupplies

MI-QC243-MXY

MilitaryDC-DCPowerSupplies

MI-QC243-MYY

MilitaryDC-DCPowerSupplies

MJD243

NPNSILICONPOWERTRANSISTOR4AMPERES100VOLTS12.5WATTS

...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage—VCEO(sus)=100Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=40(Min)@IC=200mAdc =15(Min)@IC=

MJD243

ComplementarySiliconPlasticPowerTransistor

ComplementarySiliconPlasticPowerTransistor DPAK−3forSurfaceMountApplications Designedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=100Vdc(Min)@IC =10mAdc •HighDCCur

MJD243

ComplementarySiliconPlasticPowerTransistorDPAK-3forSurfaceMountApplications

MJD243

ComplementarySiliconPlasticPowerTransistor

MJD243

ComplementarySiliconPlasticPowerTransistors

MJD243

ComplementarySiliconPlasticPowerTransistors