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FLX10P50

HighVoltagePowerSupplies

TDKTDK Corporation

东电化(中国)投资有限公司

IXTA10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP™PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •AvalancheRated •RuggedPolarPTMProcess •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications •High-

IXYS

IXYS Integrated Circuits Division

IXTH10P50

StandardPowerMOSFETP-ChannelEnhancementModeAvalancheRated

StandardPowerMOSFET P-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advan

IXYS

IXYS Integrated Circuits Division

IXTH10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP™PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •AvalancheRated •RuggedPolarPTMProcess •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications •High-

IXYS

IXYS Integrated Circuits Division

IXTP10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP™PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •AvalancheRated •RuggedPolarPTMProcess •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications •High-

IXYS

IXYS Integrated Circuits Division

IXTQ10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP™PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features •InternationalStandardPackages •AvalancheRated •RuggedPolarPTMProcess •LowPackageInductance •FastIntrinsicDiode Advantages •EasytoMount •SpaceSavings •HighPowerDensity Applications •High-

IXYS

IXYS Integrated Circuits Division

IXTT10P50

StandardPowerMOSFETP-ChannelEnhancementModeAvalancheRated

StandardPowerMOSFET P-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advan

IXYS

IXYS Integrated Circuits Division

TK10P50W

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TK10P50W

MOSFETsSiliconN-ChannelMOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

V10P50P

Reducedfootprintandvolumerequiredforsurgeprotection

LittelfuseLittelfuse Inc.

力特力特公司

WPP10P50K-F

AxialLeadedHighFrequencyPulseCapacitors

etc2List of Unclassifed Manufacturers

etc2未分类制造商

WPP10P50K-F

Film/FoilPolypropyleneCapacitors

CDE

Cornell Dubilier Electronics

详细参数

  • 型号:

    IXTM10P50

  • 功能描述:

    TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-3

供应商型号品牌批号封装库存备注价格
isc
2024
TO-3
140
国产品牌isc,可替代原装
询价
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IXYS
2022+
TO-204AA,TO-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IXYS
02+
TO-3
326
询价
IXYS
1635+
6000
好渠道!好价格!一片起卖!
询价
IXYS
20+
TO-3
35830
原装优势主营型号-可开原型号增税票
询价
ISC/固电
21+ROHS
TO-3
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IXYS
22+
TO263-7
30000
只做原装
询价
更多IXTM10P50供应商 更新时间2024-5-31 8:37:00