首页 >IXTH12N120>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXTH12N120 | Power MOSFET, Avalanche Rated High Voltage Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Motorcontrols •UninterruptiblePowerSupplies(UPS) •DCchoppers Advan | IXYS IXYS Integrated Circuits Division | IXYS | |
IXTH12N120 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
HighVoltageHiPerFETPowerMOSFET Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Motorcontrols •UninterruptiblePowerSupplies(UPS) •DCchoppers Advan | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarPowerMOSFETHiPerFET Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomou | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarPowerMOSFETHiPerFET Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomou | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarPowerMOSFETHiPerFET Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomou | IXYS IXYS Integrated Circuits Division | IXYS | ||
Highspeedswitching | KECKEC CORPORATION KEC株式会社 | KEC | ||
Highspeedswitching | KECKEC CORPORATION KEC株式会社 | KEC | ||
InsulatedGateBipolarTransistorwithAnti-ParallelDiode ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblockingcapability.ShortcircuitratedIGBTsarespecificallysuitedforapplicationsrequiringaguaran | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicat | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguaranteedshortcircuitwithstandtimesuchasMotorControlDriv | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
InsulatedGateBipolarTransistorwithAnti-ParallelDiode InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltag | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
InsulatedGateBipolarTransistorwithAnti-ParallelDiode ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.69Ω(Max)@VGS=10V DESCRIPTION ·Switchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.69Ω(Max)@VGS=10V DESCRIPTION ·Switchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
IXTH12N120
- 功能描述：
MOSFET 12 Amps 1200V 1.300 Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
59 |
专业模块销售,欢迎咨询 |
询价 | ||||
IXYS |
22+ |
TO-247 |
4650 |
询价 | |||
IXYS |
23+ |
TO-247 |
9960 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
08+(pbfree) |
8866 |
询价 | |||||
IXYS |
24+ |
TO-247 |
5000 |
只做原装公司现货 |
询价 | ||
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IXYS |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IXYS/艾赛斯 |
2022+ |
19 |
全新原装 货期两周 |
询价 | |||
IXYS |
2020+ |
TO-3P |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IXYS |
23+ |
TO-247 |
2000 |
进口原装现货假一罚十.价格优势.热卖中.. |
询价 |
相关规格书
更多- IXTH12N140
- IXTH12N45
- IXTH12N45MA
- IXTH12N50
- IXTH12N50MA
- IXTH12N80
- IXTH12N95
- IXTH130N10T
- IXTH130N20T
- IXTH13N80
- IXTH140P10T
- IXTH14N80
- IXTH152N085T
- IXTH15N40MB
- IXTH15N50A
- IXTH15N55
- IXTH15N65
- IXTH15P15
- IXTH160N10T
- IXTH16N10D2
- IXTH16N50D2
- IXTH16P60P
- IXTH180N10T
- IXTH19P15
- IXTH1N100
- IXTH200N075T
- IXTH200N10T
- IXTH20N55
- IXTH20N55MB
- IXTH20P50P
- IXTH21N60
- IXTH220N075T
- IXTH22P15
- IXTH230N085T
- IXTH23N25MB
- IXTH24N50
- IXTH24N50Q
- IXTH26N60P
- IXTH280N055T
- IXTH2N170D2
- IXTH300N04T2
- IXTH30N50
- IXTH30N50L2
- IXTH35N30
- IXTH36N20T
相关库存
更多- IXTH12N150
- IXTH12N45A
- IXTH12N45MB
- IXTH12N50A
- IXTH12N50MB
- IXTH12N90
- IXTH12P25
- IXTH130N15T
- IXTH13N110
- IXTH140P05T
- IXTH14N100
- IXTH150N17T
- IXTH15N40MA
- IXTH15N45A
- IXTH15N50L2
- IXTH15N60
- IXTH15N70
- IXTH160N075T
- IXTH160N15T
- IXTH16N20D2
- IXTH16P20
- IXTH180N085T
- IXTH182N055T
- IXTH19P20
- IXTH1N250
- IXTH200N085T
- IXTH20N50D
- IXTH20N55MA
- IXTH20N60
- IXTH21N50
- IXTH220N055T
- IXTH22N50P
- IXTH22P20
- IXTH23N25MA
- IXTH240N055T
- IXTH24N50L
- IXTH24P20
- IXTH26P20P
- IXTH28N50Q
- IXTH2R4N120P
- IXTH30N25
- IXTH30N50L
- IXTH32P20T
- IXTH360N055T2
- IXTH36N50P
