N-Channel Enhancement Mode

Features

● International standard packages

● Low RDS(on) HDMOS™ process

● Rugged polysilicon gate cell structure

● Low package inductance (< 5 nH)

- easy to drive and to protect

● Fast switching times

Applications

● Switch-mode and resonant-mode power supplies

● Motor controls

● Uninterruptible Power Supplies (UPS)

● DC choppers

Advantages

● Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

● Space savings

● High power density

IXTH12N100属于分立半导体产品 > 晶体管 - FET，MOSFET - 单个。IXYS Integrated Circuits Division制造生产的IXTH12N100晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。