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IXTH11N80

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

IXTH11N80

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

11N80

11A,812VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

HFP11N80Z

800VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

IXFH11N80

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodrive

IXYS

IXYS Integrated Circuits Division

IXFH11N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFM11N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.95Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFM11N80

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodrive

IXYS

IXYS Integrated Circuits Division

IXTM11N80

MegaMOSFET

N-ChannelEnhancementMode Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

IXTM11N80

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SFF11N80

11AMP/800Volts0.95廓N-ChannelMOSFET

SSDI

SSDI

SFF11N80B

11AMP/800Volts0.95ohmN-ChannelPowerMOSFET

SSDI

SSDI

SFF11N80N

11AMP/800Volts0.95ohmN-ChannelPowerMOSFET

SSDI

SSDI

SFF11N80P

11AMP/800Volts0.95ohmN-ChannelPowerMOSFET

SSDI

SSDI

SIHA11N80AE

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技

SIHA11N80E

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SIHA11N80E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技

SIHB11N80AE

ESeriesPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •IntegratedZenerdiodeESDprotection •Materialcategorization:fordefinitionsofcompliance pleasesee

VishayVishay Siliconix

威世科技

SIHB11N80E

ESeriesPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •

VishayVishay Siliconix

威世科技

SIHB11N80E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IXTH11N80

  • 制造商:

    IXYS

  • 制造商全称:

    IXYS Corporation

  • 功能描述:

    MegaMOSFET

供应商型号品牌批号封装库存备注价格
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IXYS艾赛斯
1641+
TO-247
887
代理品牌
询价
IXYS
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
询价
IXYS
16+
TO-247
2100
公司大量全新现货 随时可以发货
询价
IXYS
23+
TO-247
1344
询价
IXYS/艾赛斯
23+
TO-247
10000
公司只做原装正品
询价
IXYS/艾赛斯
22+
247
6000
十年配单,只做原装
询价
IXYS/艾赛斯
23+
TO-247
6000
原装正品,支持实单
询价
IXYS
9912+
TO-247
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
isc
2024
TO-247
150
国产品牌isc,可替代原装
询价
更多IXTH11N80供应商 更新时间2024-6-5 9:02:00