IGBT Improved SCSOA Capability

Features

• Second generation HDMOSTM process Low VCE(sat)

- for minimum on-state conduction losses

• MOS Gate turn-on

- drive simplicity

Applications

• AC motor speed control

• DC servo and robot drives

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode power supplies

• DC choppers

Advantages

• Easy to mount (isolated mounting hole)

• Reduces assembly time and cost

IXSH25N120A属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。IXYS Integrated Circuits Division制造生产的IXSH25N120A晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。