Medium-Speed Low-Vsat PT IGBT

for 5 - 40kHz Switching

Features

• Optimized for Low Conduction and

Switching Losses

• Square RBSOA

• Anti-Parallel Ultra Fast Diode

• International Standard Package

Advantages

• High Power Density

• Low Gate Drive Requirement

Applications

• Power Inverters

• UPS

• Motor Drives

• SMPS

• PFC Circuits

• Battery Chargers

• Welding Machines

• Lamp Ballasts

IXGH36N60B3D1属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。IXYS Integrated Circuits Division制造生产的IXGH36N60B3D1晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。