IXFV20N80P说明书PDF资料批发供应无锡固电-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IXFV20N80P	文件：331.96 Kbytes Page：5 Pages	PolarHV HiPerFET Power MOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe	IXYS IXYS Integrated Circuits Division	IXYS
IXFV20N80PS	文件：331.96 Kbytes Page：5 Pages	PolarHV HiPerFET Power MOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe	IXYS IXYS Integrated Circuits Division	IXYS
IXFC20N80P	文件：139.47 Kbytes Page：4 Pages	PolarHVHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFC20N80P	文件：323.81 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH20N80P	文件：336.99 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.52Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH20N80P	文件：331.96 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe	IXYS IXYS Integrated Circuits Division	IXYS
IXFH20N80Q	文件：337.73 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH20N80Q	文件：72.52 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •E	IXYS IXYS Integrated Circuits Division	IXYS
IXFK20N80Q	文件：72.52 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •E	IXYS IXYS Integrated Circuits Division	IXYS
IXFK20N80Q	文件：328.98 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR20N80	文件：330.15 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=500mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFR20N80P	文件：139.47 Kbytes Page：4 Pages	PolarHVHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFT20N80P	文件：331.96 Kbytes Page：5 Pages	PolarHVHiPerFETPowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowe	IXYS IXYS Integrated Circuits Division	IXYS
IXFT20N80Q	文件：72.52 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)lowQg •Avalancheenergyandcurrentrated •Fastintrinsicrectifier Advantages •E	IXYS IXYS Integrated Circuits Division	IXYS

详细参数

型号：
IXFV20N80P
功能描述：
MOSFET 20 Amps 800V 0.52 Rds
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	IXFV20N80P	IXYS	24+	PLUS220	30000	晶体管-分立半导体产品-原装正品	询价
深圳市华来深电子有限公司	IXFV20N80P	IXYS	23+	TO-220-3	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市宏捷佳电子科技有限公司	IXFV20N80P	IXYS	23+	PLUSTO-220	12300	全新原装真实库存含13点增值税票!	询价
深圳兆威电子有限公司	IXFV20N80P	IXYS	20+	TO-220-3	90000	全新原装正品/库存充足	询价
深圳市艾宇欣科技有限公司	IXFV20N80P	IXYS	1931+	N/A	18	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	IXFV20N80P	IXYS	1809+	TO-220	326	就找我吧!--邀您体验愉快问购元件!	询价
深圳市国宇半导体科技有限公司	IXFV20N80P	IXYS/艾赛斯	23+	PLUS220	10000	公司只做原装正品	询价
深圳市易讯博科技有限公司	IXFV20N80P	IXYS	22+	NA	18	加我QQ或微信咨询更多详细信息,	询价
深圳市河锋鑫科技有限公司	IXFV20N80P	IXYS	22+	TO2203 Short Tab	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	IXFV20N80P	IXYS	21+	TO2203 Short Tab	13880	公司只售原装,支持实单	询价

更多IXFV20N80P供应商更新时间2024-6-1 11:09:00

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