IXFK36N60P技术资料参数贸易商无锡固电ISC-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IXFK36N60P	文件：329.22 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK36N60P	文件：274.33 Kbytes Page：4 Pages	PolarHV HiPerFET Power MOSFET	IXYS IXYS Integrated Circuits Division	IXYS
FCA36N60NF	文件：269.28 Kbytes Page：8 Pages	N-ChannelMOSFET,FRFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCA36N60NF	文件：347.97 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=34.9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=95mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCB36N60N	文件：333.13 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=90mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCB36N60N	文件：239.62 Kbytes Page：8 Pages	N-ChannelSupreMOS짰MOSFET600V,36A,90m廓 Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCB36N60N	文件：239.62 Kbytes Page：8 Pages	N-ChannelSupreMOS짰MOSFET600V,36A,90m廓 Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCB36N60NTM	文件：239.62 Kbytes Page：8 Pages	N-ChannelSupreMOS짰MOSFET600V,36A,90m廓 Description TheSupreMOS®MOSFETisFairchildSemiconductor’snextgenerationofhighvoltagesuper-junction(SJ)technologyemployingadeeptrenchfillingprocessthatdifferentiatesitfromtheconventionalSJMOSFETs.ThisadvancedtechnologyandpreciseprocesscontrolprovideslowestRspon	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCP36N60N	文件：417.3 Kbytes Page：8 Pages	N-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCP36N60N	文件：851.1 Kbytes Page：10 Pages	AC-DCPowerSupply	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FCP36N60N	文件：319.61 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCPF36N60NT	文件：323.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=36A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=90mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FCPF36N60NT	文件：851.1 Kbytes Page：10 Pages	AC-DCPowerSupply	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IXFH36N60P	文件：372.89 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=190mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH36N60P	文件：274.33 Kbytes Page：4 Pages	PolarHVHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFK36N60	文件：192.1 Kbytes Page：4 Pages	HiPerFETPowerMOSFET HiPerFET™PowerMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpol	IXYS IXYS Integrated Circuits Division	IXYS
IXFK36N60	文件：328.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=36A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFN36N60	文件：192.1 Kbytes Page：4 Pages	HiPerFETPowerMOSFET HiPerFET™PowerMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •JEDECTO-264AA,epoxymeet UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpol	IXYS IXYS Integrated Circuits Division	IXYS
IXFR36N60P	文件：149.82 Kbytes Page：4 Pages	PolarHVHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFT36N60P	文件：274.33 Kbytes Page：4 Pages	PolarHVHiPerFETPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS

详细参数

型号：
IXFK36N60P
功能描述：
MOSFET 600V 36A
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	IXFK36N60P	IXYS	24+	TO-264AA(IXFK)	30000	晶体管-分立半导体产品-原装正品	询价
深圳市坤融电子科技有限公司	IXFK36N60P	IXYS/艾赛斯	2024+实力库存	SOT223	182	只做原厂渠道可追溯货源	询价
深圳市一线半导体有限公司	IXFK36N60P	IXYS	07+/08+	TO-264	35		询价
深圳市百视威讯电子科技有限公司	IXFK36N60P		23+	N/A	90050	正品授权货源可靠	询价
深圳市宏捷佳电子科技有限公司	IXFK36N60P	IXYS	23+	TO-264	12300	全新原装真实库存含13点增值税票!	询价
瀚佳科技(深圳)有限公司	IXFK36N60P	IXYS	18+	TO-3PL	2050	公司大量全新原装正品随时可以发货	询价
深圳市兴灿科技有限公司	IXFK36N60P	IXYS	23+	TO-3PL	269		询价
深圳市艾宇欣科技有限公司	IXFK36N60P	IXYS	1931+	N/A	18	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳兆威电子有限公司	IXFK36N60P	IXYS/艾赛斯	23+	TO-264	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市科雨电子有限公司	IXFK36N60P	IXYS	1809+	TO-264	326	就找我吧!--邀您体验愉快问购元件!	询价

更多IXFK36N60P供应商更新时间2024-5-21 22:49:00

详细参数

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