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IXFK24N100	文件：99.43 Kbytes Page：2 Pages	HiPerRF Power MOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancherated •Lowpackageinductance •Fastintrinsicrectifier Applications •	IXYS IXYS Integrated Circuits Division	IXYS
IXFK24N100	文件：329.04 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK24N100	文件：137.63 Kbytes Page：4 Pages	HiPerFETTM Power MOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFK24N100F	文件：99.43 Kbytes Page：2 Pages	HiPerRF Power MOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancherated •Lowpackageinductance •Fastintrinsicrectifier Applications •	IXYS IXYS Integrated Circuits Division	IXYS
IXFK24N100F	文件：161.07 Kbytes Page：4 Pages	HiPerRF Power MOSFETs F-Class: MegaHertz Switching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance	IXYS IXYS Integrated Circuits Division	IXYS
IXFK24N100F	文件：329.07 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK24N100Q3	文件：131.38 Kbytes Page：5 Pages	Advance Technical Information HiperFETPowerMOSFETsQ3-Class N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features •LowIntrinsicGateResistance •LowPackageInductance •FastIntrinsicRectifier •LowRDS(on)andQG Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applica	IXYS IXYS Integrated Circuits Division	IXYS
IXFK24N100Q3	文件：329.24 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.44Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK24N100_07	文件：137.63 Kbytes Page：4 Pages	HiPerFETTM Power MOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFK24N100_08	文件：139.35 Kbytes Page：4 Pages	HiPerFET Power MOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFE24N100	文件：428.31 Kbytes Page：2 Pages	SingleMOSFETDie HiPerFETPowerMOSFET SingleMOSFETDie Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •FastintrinsicRectifier Applications •DC-DCconverters •Batte	IXYS IXYS Integrated Circuits Division	IXYS
IXFF24N100	文件：72.28 Kbytes Page：2 Pages	HiPerFETTMPowerMosfetinHighVoltageISOPLUSI4-PACTM Features •HiPerFETTMtechnology -lowRDSon -lowgatechargeforhighfrequencyoperation -unclampedinductiveswitching(UIS)capability -dv/dtruggedness -fastintrinsicreversediode •ISOPLUSI4-PAC™highvoltagepackage -isolatedbacksurface -enlargedcree	IXYS IXYS Integrated Circuits Division	IXYS
IXFN24N100	文件：91.67 Kbytes Page：4 Pages	HiPerFET-TMPowerMOSFET Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu	IXYS IXYS Integrated Circuits Division	IXYS
IXFN24N100	文件：105.16 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu	IXYS IXYS Integrated Circuits Division	IXYS
IXFN24N100F	文件：108 Kbytes Page：2 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect	IXYS IXYS Integrated Circuits Division	IXYS
IXFN24N100F	文件：105.16 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu	IXYS IXYS Integrated Circuits Division	IXYS
IXFR24N100	文件：36.22 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsISOPLUS247TM(ElectricallyIsolatedBackSurface) HiPerFET™PowerMOSFETISOPLUS247™(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeAvalancheRated Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacit	IXYS IXYS Integrated Circuits Division	IXYS
IXFR24N100	文件：330.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=390mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX24N100	文件：367.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX24N100	文件：139.35 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS

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详细参数

型号：
IXFK24N100
功能描述：
MOSFET 1KV 24A
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宇烁芯半导体科技有限公司	IXFK24N100	IXYS(艾赛斯)	2023		10000	全新、原装	询价
深圳市一线半导体有限公司	IXFK24N100	IXYS	07+/08+	TO-264AA	50		询价
深圳市星佑电子有限公司	IXFK24N100	IXY	05+	TO-3PL	500	原装进口	询价
齐创科技(上海,北京,青岛)有限公司	IXFK24N100	IXYS	23+	TO-3PL	5000	原装正品,假一罚十	询价
深圳市鹏和科技有限公司	IXFK24N100	IXYS	24+	to264	5000	全现原装公司现货	询价
深圳市永贝尔科技有限公司	IXFK24N100	IXYS	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市芯祺盛科技有限公司	IXFK24N100	IXYS	1746+	TO264	8862	深圳公司现货!特价支持工厂客户!提供样品!	询价
深圳市宏捷佳电子科技有限公司	IXFK24N100	IXYS	23+	TO-264	12300	全新原装真实库存含13点增值税票!	询价
中天科工半导体（深圳）有限公司	IXFK24N100	IXYS	20+	TO-264	36900	原装优势主营型号-可开原型号增税票	询价
深圳市纳艾斯科技有限公司	IXFK24N100	IXYS	2020+	TO-264	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价

更多IXFK24N100供应商更新时间2024-5-16 14:52:00

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