General Description

The IXDN430/IXDI430/IXDD430/IXDS430 are high speed high current gate drivers specifically designed to drive MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXD_430 can source and sink 30A of peak current while producing voltage rise and fall times of less than 30ns. The input of the drivers are compatible with TTL or CMOS and are fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shoot-through is virtually eliminated in all configurations. Their features and wide safety margin in operating voltage and power make the drivers unmatched in

performance and value.

Features

• Built using the advantages and compatibility of CMOS and IXYS HDMOS™ processes

• Latch-Up Protected

• High Peak Output Current: 30A Peak

• Wide Operating Range: 8.5V to 35V

• Under Voltage Lockout Protection

• Ability to Disable Output under Faults

• High Capacitive Load

Drive Capability: 5600 pF in <25ns

• Matched Rise And Fall Times

• Low Propagation Delay Time

• Low Output Impedance

• Low Supply Current

IXDI430YI属于集成电路（IC） > 栅极驱动器。IXYS Integrated Circuits Division制造生产的IXDI430YI栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。