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ISPW11N60S5

isc N-Channel MOSFET Transistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

11N60S5

CoolMOS??PowerTransistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

11N60S5

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SPB11N60S5

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SPB11N60S5

CoolMOS??PowerTransistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPB11N60S5

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPB11N60S5

NewrevolutionaryhighvoltagetechnologyUltralowgatecharge

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPI11N60S5

CoolMOS??PowerTransistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPI11N60S5

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPI11N60S5

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPP11N60S5

N-Channel650V(D-S)MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SPP11N60S5

iscN-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPP11N60S5

CoolMOS??PowerTransistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPP11N60S5

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPW11N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPW11N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPW11N60S5

iscN-ChannelMOSFETTransistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
LATTICE
23+
NA
25060
只做进口原装,终端工厂免费送样
询价
LATTICE/莱迪斯
22+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
LATTICE/莱迪斯
21+
BGA
5000
原装现货/假一赔十/支持第三方检验
询价
LATTICE
23+
BGA
47434
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
LATTICE
20+
BGA1717
35830
原装优势主营型号-可开原型号增税票
询价
LATTICE
2023+
BGA1717
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
LATTICE
21+
BGA1717
35210
一级代理/放心采购
询价
N/A
23+
NA
1065
专业优势供应
询价
PAN
16+
SOT-423
10000
进口原装现货/价格优势!
询价
NATIONAL
23+
SOT23-3
39215
询价
更多ISPW11N60S5供应商 更新时间2024-6-6 9:02:00