ISPW11N60C3数据手册市场行情无锡固电ISC-114ic电子网

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ISPW11N60C3	文件：335.59 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
11N60C3	文件：1.84713 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
ISPP11N60C3	文件：339.13 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPA11N60C3	文件：314.85 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPA11N60C3	文件：1.07096 Mbytes Page：9 Pages	N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SPA11N60C3	文件：352.75 Kbytes Page：14 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA11N60C3	文件：659.64 Kbytes Page：16 Pages	CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA11N60C3	文件：662.11 Kbytes Page：15 Pages	CoolMOS??PowerTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB11N60C3	文件：475.58 Kbytes Page：13 Pages	CoolMOSPowerTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB11N60C3	文件：193.21 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB11N60C3	文件：352.75 Kbytes Page：14 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPB11N60C3	文件：1.04045 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Telecommunications -Serverandtelecompowersupplies •Light	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SPB11N60C3	文件：189.57 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPBI11N60C3	文件：193.21 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：193.21 Kbytes Page：14 Pages	CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •150°Coperatingtemperature	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：352.75 Kbytes Page：14 Pages	CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：662.11 Kbytes Page：15 Pages	CoolMOS??PowerTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：659.64 Kbytes Page：16 Pages	CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPI11N60C3	文件：331.58 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPP11N60C3	文件：1.03545 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	ISPXPGA	LATTICE	23+	NA	25060	只做进口原装,终端工厂免费送样	询价
贸泽芯城（深圳）电子科技有限公司	ISPXPLD-75F256	LATTICE/莱迪斯	22+	BGA	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市明盛嘉电子科技有限公司	ISPXPLDLC5512MB45F256-75I	LATTICE/莱迪斯	21+	BGA	5000	原装现货/假一赔十/支持第三方检验	询价
深圳市能元时代电子有限公司	ISPXPLDLC5512MB45F256-75I	LATTICE	23+	BGA	47434	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
中天科工半导体（深圳）有限公司	ISPXPLDLC5512MB-75F256	LATTICE	20+	BGA1717	35830	原装优势主营型号-可开原型号增税票	询价
深圳市维尔达电子有限公司	ISPXPLDLC5512MB-75F256	LATTICE	2023+	BGA1717	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
瀚佳科技(深圳)有限公司	ISPXPLDLC5512MB-75F256	LATTICE	21+	BGA1717	35210	一级代理/放心采购	询价
深圳市博浩通科技有限公司	ispXPLDLC5512MC75F25	N/A	23+	NA	1065	专业优势供应	询价
深圳诚思涵科技有限公司	ISQ	PAN	16+	SOT-423	10000	进口原装现货/价格优势!	询价
深圳市昌和盛利电子有限公司	ISQ	NATIONAL	23+	SOT23-3	39215		询价

更多ISPW11N60C3供应商更新时间2024-6-6 9:02:00

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