| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual LDO with Low Noise, Very High PSRR, and Low IQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual LDO with Low Noise, Very High PSRR, and Low IQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual LDO with Low Noise, Very High PSRR, and Low IQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual LDO with Low Noise, Very High PSRR, and Low IQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual LDO with Low Noise, Very High PSRR, and Low IQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual LDO with Low Noise, Very High PSRR, and Low IQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual LDO with Low Noise, Very High PSRR, and Low IQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual LDO with Low Noise, Very High PSRR, and Low IQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual LDO with Low Noise, Very High PSRR, and Low IQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual LDO with Low Noise, Very High PSRR, and Low IQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
详细参数
- 型号：
ISL9000
- 制造商：
INTERSIL
- 制造商全称：
Intersil Corporation
- 功能描述：
Dual LDO with Low Noise, Very High PSRR, and Low IQ
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
13+ |
DFN-10 |
800 |
特价热销现货库存 |
询价 | ||
INTERSIL |
2022 |
DFN-10 |
1715 |
原厂原装正品,价格超越代理 |
询价 | ||
Intersil |
07+/08+ |
10-DFN |
7500 |
询价 | |||
INTERSIL |
13+ |
2826 |
原装分销 |
询价 | |||
INTERSIL |
11+ |
690 |
原装正品长期供货，如假包赔包换 徐小姐13714450367 |
询价 | |||
INTERSIL |
17+ |
QFN10 |
1500 |
决对房间现货 |
询价 | ||
INTERSIL |
2339+ |
QFN-10 |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
INTERSIL |
23+ |
DFN |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
INTERSIL |
23+ |
QFN-10 |
10000 |
原装正品,假一罚十 |
询价 | ||
INTERSIL |
2016+ |
QFN |
5152 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 |
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