Features

▪ Production testing and qualification follow the

standard AS6294/1

▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate

driver

▪ Wide driver bias range of 4.5V to 13.2V

▪ Up to 16.5V logic inputs (regardless of VDD level)

• Inverting and non-inverting inputs

▪ Integrated driver optimized for enhancement-mode

GaN FETs

• Internal 4.5V regulated gate drive voltage

▪ Full military temperature range operation

• TA = -55°C to +125°C

• TJ = -55°C to +150°C

▪ Radiation hardness assurance (lot-by-lot)

• Low dose rate (0.01rad(Si)/s): 75krad(Si)

▪ SEE hardness for Driver (see the SEE test report)

• No SEB/L LETTH, VDD = 16.5V: 86MeV•cm2/mg

• No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg

▪ SEE hardness for GaN FET (see the SEE test

report)

• No SEB/L LETTH, VDS = 100V: 86MeV•cm2/mg