Features

• DLA SMD# 5962-15248

• Fabricated using P6 SOI process technology

• Rail-to-rail operation

• No latch-up

• Low rDS(ON). . . . . . . . . . . . . . . . . . . . . . . . . .<120Ω (maximum)

• Single supply operation . . . . . . . . . . . . . . . . . . . . . . 3V to 5.5V

• Adjustable logic threshold control

• Cold sparing capable . . . . . . . . . . . . . . . . . . . . . . . . -0.4V to 7V

• Analog overvoltage range . . . . . . . . . . . . . . . . . . . . -0.4V to 7V

• Switch input off leakage . . . . . . . . . . . . . . . . . . . . . . . . . 120nA

• Transition times (tAHL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70ns

• Internally grounded metal lid

• Break-before-make switching

• ESD protection ≥5kV (HBM)

• Operating temperature range. . . . . . . . . . . .-55°C to +125°C

• Radiation acceptance testing

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .75krad(Si)

Note: All lots were assurance tested to 75krad

(0.01rad(Si)/s) wafer-by-wafer.

• SEE hardness (see SEE report for details)

- SEL/SEB LETTH (V+ = 6.3V). . . . . . . . . . . . . 60MeV•cm2/mg

Applications

• Telemetry signal processing

• Harsh environments

• Down-hole drilling