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ISL6620ACRZ中文资料PDF规格书
厂商型号 |
ISL6620ACRZ |
参数属性 | ISL6620ACRZ 封装/外壳为10-VFDFN 裸露焊盘;包装为卷带(TR);类别为集成电路(IC) > 栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 10DFN |
功能描述 | VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers |
文件大小 |
223.45 Kbytes |
页面数量 |
10 页 |
生产厂商 | Intersil Corporation |
企业简称 |
Intersil【瑞萨电子】 |
中文名称 | 瑞萨电子株式会社官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-6-11 18:30:00 |
ISL6620ACRZ规格书详情
The ISL6620, ISL6620A is a high frequency MOSFET driver
designed to drive upper and lower power N-Channel
MOSFETs in a synchronous rectified buck converter topology.
The advanced PWM protocol of ISL6620, ISL6620A is
specifically designed to work with Intersil VR11.1 controllers
and combined with N-Channel MOSFETs, form a complete
core-voltage regulator solution for advanced microprocessors.
When ISL6620, ISL6620A detects a PSI protocol sent by an
Intersil VR11.1 controller, it activates Diode Emulation (DE)
operation; otherwise, it operates in normal Continuous
Conduction Mode (CCM) PWM mode.
The IC is biased by a single low voltage supply (5V),
minimizing driving losses in high MOSFET gate capacitance
and high switching frequency applications. Each driver is
capable of driving a 3nF load with less than 10ns rise/fall time.
Bootstrapping of the upper gate driver is implemented via an
internal low forward drop diode, reducing implementation cost,
complexity, and allowing the use of higher performance, cost
effective N-Channel MOSFETs.
To further enhance light load efficiency, ISL6620, ISL6620A
enables diode emulation operation during PSI mode. This
allows Discontinuous Conduction Mode (DCM) by detecting
when the inductor current reaches zero and subsequently
turning off the low side MOSFET to prevent it from sinking
current.
An advanced adaptive shoot-through protection is integrated
to prevent both the upper and lower MOSFETs from
conducting simultaneously and to minimize dead time. The
ISL6620, ISL6620A has a 20kΩ integrated high-side
gate-to-source resistor to prevent self turn-on due to high
input bus dV/dt.
Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Advanced Adaptive Zero Shoot-Through Protection
• 36V Internal Bootstrap Schottky Diode
• Advanced PWM Protocol (Patent Pending) to Support PSI
Mode, Diode Emulation, Three-State Operation
• Diode Emulation For Enhanced Light Load Efficiency
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency
- 4A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• VCC Undervoltage Protection
• Enable Input and Power-On Reset
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• DFN Package:
- Compliant to JEDEC PUB95 MO-220
DFN - Dual Flat No Leads - Package Outline
- Near Chip Scale Package Footprint, which Improves
PCB Efficiency and has a Thinner Profile
• Pb-Free (RoHS Compliant)
Applications
• High Light Load Efficiency Voltage Regulators
• Core Regulators for Advanced Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
产品属性
- 产品编号:
ISL6620ACRZ
- 制造商:
Renesas Electronics America Inc
- 类别:
集成电路(IC) > 栅极驱动器
- 包装:
卷带(TR)
- 驱动配置:
半桥
- 通道类型:
同步
- 栅极类型:
N 沟道 MOSFET
- 电压 - 供电:
4.5V ~ 5.5V
- 电流 - 峰值输出(灌入,拉出):
2A,2A
- 输入类型:
非反相
- 上升/下降时间(典型值):
8ns,8ns
- 工作温度:
0°C ~ 125°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
10-VFDFN 裸露焊盘
- 供应商器件封装:
10-DFN(3x3)
- 描述:
IC GATE DRVR HALF-BRIDGE 10DFN
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
23+ |
DFN10EP(3x3) |
6000 |
诚信服务,绝对原装原盘 |
询价 | ||
Intersil |
21+ |
10DFN |
13880 |
公司只售原装,支持实单 |
询价 | ||
Intersil |
22+ |
10DFN |
9000 |
原厂渠道,现货配单 |
询价 | ||
Intersil |
1931+ |
N/A |
597 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
INTERSIL |
18+ |
DFN |
24773 |
全新原装现货,可出样品,可开增值税发票 |
询价 | ||
Intersil |
23+ |
10DFN |
9000 |
原装正品,支持实单 |
询价 | ||
INTERSIL |
23+ |
NA/ |
5508 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
RENESAS(瑞萨)/IDT |
23+ |
DFN10EP(3x3) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ADI |
2022+ |
SOP16 |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
RENESAS(瑞萨)/IDT |
1921+ |
DFN-10(3x3) |
3575 |
向鸿仓库现货,优势绝对的原装! |
询价 |