首页>ISL6620ACRZ>规格书详情

ISL6620ACRZ中文资料PDF规格书

ISL6620ACRZ
厂商型号

ISL6620ACRZ

参数属性

ISL6620ACRZ 封装/外壳为10-VFDFN 裸露焊盘;包装为卷带(TR);类别为集成电路(IC) > 栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 10DFN

功能描述

VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers

文件大小

223.45 Kbytes

页面数量

10

生产厂商 Intersil Corporation
企业简称

Intersil瑞萨电子

中文名称

瑞萨电子株式会社官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-6-11 18:30:00

ISL6620ACRZ规格书详情

The ISL6620, ISL6620A is a high frequency MOSFET driver

designed to drive upper and lower power N-Channel

MOSFETs in a synchronous rectified buck converter topology.

The advanced PWM protocol of ISL6620, ISL6620A is

specifically designed to work with Intersil VR11.1 controllers

and combined with N-Channel MOSFETs, form a complete

core-voltage regulator solution for advanced microprocessors.

When ISL6620, ISL6620A detects a PSI protocol sent by an

Intersil VR11.1 controller, it activates Diode Emulation (DE)

operation; otherwise, it operates in normal Continuous

Conduction Mode (CCM) PWM mode.

The IC is biased by a single low voltage supply (5V),

minimizing driving losses in high MOSFET gate capacitance

and high switching frequency applications. Each driver is

capable of driving a 3nF load with less than 10ns rise/fall time.

Bootstrapping of the upper gate driver is implemented via an

internal low forward drop diode, reducing implementation cost,

complexity, and allowing the use of higher performance, cost

effective N-Channel MOSFETs.

To further enhance light load efficiency, ISL6620, ISL6620A

enables diode emulation operation during PSI mode. This

allows Discontinuous Conduction Mode (DCM) by detecting

when the inductor current reaches zero and subsequently

turning off the low side MOSFET to prevent it from sinking

current.

An advanced adaptive shoot-through protection is integrated

to prevent both the upper and lower MOSFETs from

conducting simultaneously and to minimize dead time. The

ISL6620, ISL6620A has a 20kΩ integrated high-side

gate-to-source resistor to prevent self turn-on due to high

input bus dV/dt.

Features

• Dual MOSFET Drives for Synchronous Rectified Bridge

• Advanced Adaptive Zero Shoot-Through Protection

• 36V Internal Bootstrap Schottky Diode

• Advanced PWM Protocol (Patent Pending) to Support PSI

Mode, Diode Emulation, Three-State Operation

• Diode Emulation For Enhanced Light Load Efficiency

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency

- 4A Sinking Current Capability

- Fast Rise/Fall Times and Low Propagation Delays

• VCC Undervoltage Protection

• Enable Input and Power-On Reset

• Expandable Bottom Copper Pad for Enhanced Heat

Sinking

• DFN Package:

- Compliant to JEDEC PUB95 MO-220

DFN - Dual Flat No Leads - Package Outline

- Near Chip Scale Package Footprint, which Improves

PCB Efficiency and has a Thinner Profile

• Pb-Free (RoHS Compliant)

Applications

• High Light Load Efficiency Voltage Regulators

• Core Regulators for Advanced Microprocessors

• High Current DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

产品属性

  • 产品编号:

    ISL6620ACRZ

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    卷带(TR)

  • 驱动配置:

    半桥

  • 通道类型:

    同步

  • 栅极类型:

    N 沟道 MOSFET

  • 电压 - 供电:

    4.5V ~ 5.5V

  • 电流 - 峰值输出(灌入,拉出):

    2A,2A

  • 输入类型:

    非反相

  • 上升/下降时间(典型值):

    8ns,8ns

  • 工作温度:

    0°C ~ 125°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    10-VFDFN 裸露焊盘

  • 供应商器件封装:

    10-DFN(3x3)

  • 描述:

    IC GATE DRVR HALF-BRIDGE 10DFN

供应商 型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
23+
DFN10EP(3x3)
6000
诚信服务,绝对原装原盘
询价
Intersil
21+
10DFN
13880
公司只售原装,支持实单
询价
Intersil
22+
10DFN
9000
原厂渠道,现货配单
询价
Intersil
1931+
N/A
597
加我qq或微信,了解更多详细信息,体验一站式购物
询价
INTERSIL
18+
DFN
24773
全新原装现货,可出样品,可开增值税发票
询价
Intersil
23+
10DFN
9000
原装正品,支持实单
询价
INTERSIL
23+
NA/
5508
优势代理渠道,原装正品,可全系列订货开增值税票
询价
RENESAS(瑞萨)/IDT
23+
DFN10EP(3x3)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
ADI
2022+
SOP16
6000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
RENESAS(瑞萨)/IDT
1921+
DFN-10(3x3)
3575
向鸿仓库现货,优势绝对的原装!
询价