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ISL6605IR中文资料PDF规格书

ISL6605IR
厂商型号

ISL6605IR

参数属性

ISL6605IR 封装/外壳为8-VQFN 裸露焊盘;包装为管件;类别为集成电路(IC) > 栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 8QFN

功能描述

Synchronous Rectified MOSFET Driver

文件大小

266.39 Kbytes

页面数量

9

生产厂商 Intersil Corporation
企业简称

Intersil瑞萨电子

中文名称

瑞萨电子株式会社官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-6-11 8:14:00

ISL6605IR规格书详情

The ISL6605 is a high frequency, MOSFET driver optimized

to drive two N-Channel power MOSFETs in a synchronousrectified buck converter topology. This driver combined with

an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM

controller forms a complete single-stage core-voltage

regulator solution with high efficiency performance at high

switching frequency for advanced microprocessors.

The IC is biased by a single low voltage supply (5V) and

minimizes low driver switching losses for high MOSFET gate

capacitance and high switching frequency applications.

Each driver is capable of driving a 3000pF load with an 8ns

propagation delay and less than 10ns transition time. This

product implements bootstrapping on the upper gate with an

internal bootstrap Schottky diode, reducing implementation

cost, complexity, and allowing the use of higher

performance, cost effective N-Channel MOSFETs. Adaptive

shoot-through protection is integrated to prevent both

MOSFETs from conducting simultaneously.

The ISL6605 features 4A typical sink current for the lower

gate driver, which is capable of holding the lower MOSFET

gate during the Phase node rising edge to prevent shootthrough power loss caused by the high dv/dt of the Phase

node.

The ISL6605 also features a Three-State PWM input that,

working together with Intersil multi-phase PWM controllers,

will prevent a negative transient on the output voltage when

the output is being shut down. This feature eliminates the

Schottky diode that is usually seen in a microprocessor

power system for protecting the microprocessor from

reversed-output-voltage damage.

Features

• Drives Two N-Channel MOSFETs

• Adaptive Shoot-Through Protection

• 0.4Ω On-Resistance and 4A Sink Current Capability

• Supports High Switching Frequency

- Fast Output Rise and Fall Time

- Ultra Low Propagation Delay 8ns

• Three-State PWM Input for Power Stage Shutdown

• Internal Bootstrap Schottky Diode

• Low Bias Supply Current (5V, 30µA)

• Enable Input

• QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat

No Leads-Product Outline.

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile.

• Pb-Free Plus Anneal Available (RoHS Compliant)

Applications

• Core Voltage Supplies for Intel® and AMD®

Microprocessors

• High Frequency Low Profile DC/DC Converters

• High Current Low Voltage DC/DC Converters

• Synchronous Rectification for Isolated Power Supplies

产品属性

  • 产品编号:

    ISL6605IR

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    管件

  • 驱动配置:

    半桥

  • 通道类型:

    同步

  • 栅极类型:

    N 沟道 MOSFET

  • 电压 - 供电:

    4.5V ~ 5.5V

  • 逻辑电压 - VIL,VIH:

    1V,2V

  • 电流 - 峰值输出(灌入,拉出):

    2A,2A

  • 输入类型:

    非反相

  • 上升/下降时间(典型值):

    8ns,8ns

  • 工作温度:

    -40°C ~ 125°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    8-VQFN 裸露焊盘

  • 供应商器件封装:

    8-QFN(3x3)

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8QFN

供应商 型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
23+
QFN8EP(3x3)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
INTERSIL
0707+
QFN
626
全新原装,支持实单,假一罚十,德创芯微
询价
INTERSIL
2016+
QFN
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
Renesa
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
INTERSIL
24+
QFN
990000
明嘉莱只做原装正品现货
询价
INTERSIL
22+
QFN
8000
原装正品支持实单
询价
INTERSIL
QFN-8
68900
原包原标签100%进口原装常备现货!
询价
Intersil
2022
ICMOSFETDRVRSYNCBUCK8-QF
5058
原厂原装正品,价格超越代理
询价
RENESAS-瑞萨.
24+25+/26+27+
QFN-8.贴片
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
INTERSIL
1833+
QFN
6538
原装现货!天天特价!随时可以货!
询价