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AD6426	文件：506.45 Kbytes Page：50 Pages	EnhancedGSMProcessor GENERALDESCRIPTION TheAD6426EnhancedGSMProcessor(EGSMP)isthecentralcomponentofthehighlyintegratedAD20msp425GSMChipset.Offeringalowtotalchipcount,lowbillofmaterialscostandlongtalkandstandbytimes,thechipsetoffersdesignersastraightforwardroutetoahighlyco	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
AD6426XB	文件：506.45 Kbytes Page：50 Pages	EnhancedGSMProcessor GENERALDESCRIPTION TheAD6426EnhancedGSMProcessor(EGSMP)isthecentralcomponentofthehighlyintegratedAD20msp425GSMChipset.Offeringalowtotalchipcount,lowbillofmaterialscostandlongtalkandstandbytimes,thechipsetoffersdesignersastraightforwardroutetoahighlyco	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
AD6426XST	文件：506.45 Kbytes Page：50 Pages	EnhancedGSMProcessor GENERALDESCRIPTION TheAD6426EnhancedGSMProcessor(EGSMP)isthecentralcomponentofthehighlyintegratedAD20msp425GSMChipset.Offeringalowtotalchipcount,lowbillofmaterialscostandlongtalkandstandbytimes,thechipsetoffersdesignersastraightforwardroutetoahighlyco	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
AN6426NK	文件：127.84 Kbytes Page：9 Pages	Hands-freeSpeechNetworkIC ■Features •Incorporatesallthefunctionsrequiredofahands-free telephone. •Incorporatesallthefunctionsrequiredofahandset. •ComplieswithACandDCimpedancerequirements. •Providesawidedynamicrange. •Anoisedetectingcircuitpreventsinadvertenttransmission. •Operati	PanasonicPanasonic Corporation 松下松下电器	Panasonic
AON6426	文件：112.42 Kbytes Page：1 Pages	DFN5X6PACKAGEMARKINGDESCRIPTION	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AON6426L	文件：112.42 Kbytes Page：1 Pages	DFN5X6PACKAGEMARKINGDESCRIPTION	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AON6426L	文件：139.05 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAON6426LcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. -RoHSCompliant -HalogenFree Features VDS(V)=30V ID=24A(VGS=	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
CEA6426	文件：1.77573 Mbytes Page：8 Pages	N-Channel0-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitchesforPortableDevices	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
CEA6426	文件：417.25 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,3A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEA6426	文件：620.68 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,4.6A,RDS(ON)=90mW@VGS=10V. RDS(ON)=110mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB6426	文件：407.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED6426	文件：351.46 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED6426	文件：451.96 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEM6426	文件：600.94 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,4.7A,RDS(ON)=66mW@VGS=10V. RDS(ON)=85mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEM6426	文件：415.57 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,4.7A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP6426	文件：407.84 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CET6426	文件：409.86 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,4.5A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU6426	文件：425.79 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU6426	文件：351.46 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU6426	文件：451.96 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS

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详细参数

型号：
ISL6426CB
制造商：
Rochester Electronics LLC
功能描述：
- Bulk

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市佳斯泰科技有限公司	ISL6426CB	Intersil	22+	-	2100		询价
深圳市鼎盛源芯科技有限公司	ISL6426CB	intersil	16+	原厂封装	10000	全新原装正品,代理优势渠道供应,欢迎来电咨询	询价
深圳市博正芯科技有限公司	ISL6426CB	Intersil	21+	NA	12500	正品专卖,进口原装深圳现货	询价
深圳市大联智电子有限公司	ISL6426CB	Intersil	2022+	-	6680	原厂原装，欢迎咨询	询价
深圳市宏世佳电子科技有限公司	ISL6426CB	INTERSIL	2023+	SOP16	3750	全新原厂原装产品、公司现货销售	询价
深圳市福安瓯科技有限公司	ISL6426CR	INTERSIL	22+	QFN16	5206	⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙	询价
深圳市冠亿通科技有限公司	ISL6426CR	Inters	21+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市星佑电子有限公司	ISL6426CV	INTERSIL	03/04+	TSSOP16	112	全新原装100真实现货供应	询价
深圳市博浩通科技有限公司	ISL6426CV	INTERSIL	23+	TSSOP16	1145	优势库存	询价
深圳市鹏和科技有限公司	ISL6426CV	INTERSIL	2022+	SSOP	5000	只做原装公司现货	询价

更多ISL6426CB供应商更新时间2024-4-29 15:00:00

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