ISB35832中文资料PDF规格书
ISB35832规格书详情
GENERAL DESCRIPTION
The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equivalent usable gates. The array operates over a Vdd voltage range of 2.7 to 3.6 volts.
The I/O count for this array family ranges to over 600 signals and 1000 pins dependent upon the package technology utilized. A Sea of I/O approach has been followed to give a solution to today’s problems of drive levels and specialized interface standards. The array does not utilize a set bond pad spacing but allows for pad spacings from 80 microns upwards.
The I/O can be configured for circuits ranging from low voltage CMOS and TTL to 200 mHz plus low swing differential circuits. Standards like GTL, SCSI-2, 3.3 Volt PCI, CTI, and a limited set of 5.0 Volt interfaces are currently being addressed. A specialized set of impedance matched transmis sion line driver LVTTL type circuits are also avail able with 25, 35, 45, and 55 Ohm output impedance. These buffers sacrifice direct current capabilities for matching positive and negative volt age and current waveforms.
FEATURES
■ 0.5 micron triple layer metal HCMOS process
featuring retrograde well technology, low
resistance salicided active areas, polysilicide
gates and thin metal oxide.
■ 3.3 V optimized transistor with 5 V I/O interface capability
■ 2 - input NAND delay of 0.210 ns (typ) with fanout = 2.
■ Broad I/O functionality including LVCMOS, LVTTL, GTL, PECL, and LVDS.
■ High drive I/O; capability of sinking up to 48 mA
with slew rate control, current spike suppression and impedance matching.
■ Metallised generators to support SPRAM and
DPRAM, plus an extensive embedded function library.
■ Combines Standard Cell Features with Sea of Gates time to market.
■ Fully independent power and ground configurations for inputs, core and outputs.
■ Programmable I/O ring capability up to 1000 pads.
■ Output buffers capable of driving ISA, EISA, PCI, MCA, and SCSI interface levels.
■ Active pull up and pull down devices.
■ Buskeeper I/O functions.
■ Oscillators for wide frequency spectrum.
■ Broad range of 400 SSI cells.
■ 300 element macrofunction library.
■ Design For Test includes LSSD macro library option and IEEE 1149.1
JTAG Boundary Scan architecture built in.
■ Cadence and Mentor based design system with
interfaces from multiple workstations.
■ Broad ceramic and plastic package range.
■ Latchup trigger current +/- 500 mA. ESD protection +/- 4000 volts.
产品属性
- 型号:
ISB35832
- 制造商:
STMICROELECTRONICS
- 制造商全称:
STMicroelectronics
- 功能描述:
HCMOS STRUCTURED ARRAY
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AMD |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
Isocom |
21+ |
DIP6 |
10000 |
原装现货假一罚十 |
询价 | ||
ICE Components |
22+ |
Na |
1208 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
询价 | ||
SEIKO/精工 |
TQFP |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
ISOCOM |
21+ROHS |
123864 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
SEIKOEPSO |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
SEIKO |
23+ |
TQFP |
8000 |
只做原装现货 |
询价 | ||
TRANSTECT |
2147+ |
原厂封装 |
12500 |
原厂原装现货,订货价格优势,终端BOM表可配单提供样 |
询价 | ||
SEIKOEPSON |
20+ |
QFP |
500 |
样品可出,优势库存欢迎实单 |
询价 | ||
Isocom |
2339+ |
NA |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 |